Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

Jaesung Jo, Woo Young Choi, Jung Dong Park, Jae Won Shim, Hyun-Yong Yu, Changhwan Shin

Research output: Contribution to journalArticle

113 Citations (Scopus)

Abstract

Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

Original languageEnglish
Pages (from-to)4553-4556
Number of pages4
JournalNano Letters
Volume15
Issue number7
DOIs
Publication statusPublished - 2015 Jul 8

Keywords

  • ferroelectrics
  • metal-oxide-semiconductor field-effect transistor (MOSFET)
  • negative capacitance
  • steep switching

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

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