Negative differential resistance in single-wall carbon nanotube network

S. H. Jhang, Gyu-Tae Kim, S. W. Lee, Y. W. Park, P. Bernier

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

Original languageEnglish
Pages (from-to)1243-1244
Number of pages2
JournalSynthetic Metals
Volume121
Issue number1-3
DOIs
Publication statusPublished - 2001 Mar 15
Externally publishedYes

Fingerprint

Impact ionization
Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
ionization
high current
filaments
Magnetic fields
Temperature
probes
Electric potential
electric potential
magnetic fields
temperature
Direction compound

Keywords

  • Conductivity
  • Fullerenes and derivatives
  • Transport measurements

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Polymers and Plastics

Cite this

Negative differential resistance in single-wall carbon nanotube network. / Jhang, S. H.; Kim, Gyu-Tae; Lee, S. W.; Park, Y. W.; Bernier, P.

In: Synthetic Metals, Vol. 121, No. 1-3, 15.03.2001, p. 1243-1244.

Research output: Contribution to journalArticle

Jhang, S. H. ; Kim, Gyu-Tae ; Lee, S. W. ; Park, Y. W. ; Bernier, P. / Negative differential resistance in single-wall carbon nanotube network. In: Synthetic Metals. 2001 ; Vol. 121, No. 1-3. pp. 1243-1244.
@article{f9fb9837b00e4fb1bddb27e2b5a04b09,
title = "Negative differential resistance in single-wall carbon nanotube network",
abstract = "The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.",
keywords = "Conductivity, Fullerenes and derivatives, Transport measurements",
author = "Jhang, {S. H.} and Gyu-Tae Kim and Lee, {S. W.} and Park, {Y. W.} and P. Bernier",
year = "2001",
month = "3",
day = "15",
doi = "10.1016/S0379-6779(00)01013-4",
language = "English",
volume = "121",
pages = "1243--1244",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "1-3",

}

TY - JOUR

T1 - Negative differential resistance in single-wall carbon nanotube network

AU - Jhang, S. H.

AU - Kim, Gyu-Tae

AU - Lee, S. W.

AU - Park, Y. W.

AU - Bernier, P.

PY - 2001/3/15

Y1 - 2001/3/15

N2 - The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

AB - The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

KW - Conductivity

KW - Fullerenes and derivatives

KW - Transport measurements

UR - http://www.scopus.com/inward/record.url?scp=0035867710&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035867710&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(00)01013-4

DO - 10.1016/S0379-6779(00)01013-4

M3 - Article

AN - SCOPUS:0035867710

VL - 121

SP - 1243

EP - 1244

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -