Negative differential resistance in single-wall carbon nanotube network

S. H. Jhang, G. T. Kim, S. W. Lee, Y. W. Park, P. Bernier

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.

Original languageEnglish
Pages (from-to)1243-1244
Number of pages2
JournalSynthetic Metals
Volume121
Issue number1-3
DOIs
Publication statusPublished - 2001 Mar 15

Keywords

  • Conductivity
  • Fullerenes and derivatives
  • Transport measurements

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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