Neutron irradiation effects in AlGaN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, M. Skowronski, In-Hwan Lee

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

Original languageEnglish
Pages (from-to)523-526
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Fingerprint

Hole traps
Electron traps
Neutron irradiation
neutron irradiation
Buffer layers
Heterojunctions
heterojunctions
Neutrons
Activation energy
buffers
traps
Scattering
Electrons
electrons
activation energy
neutrons
dosage
conductivity
Buffers
scattering

Keywords

  • AlGaN/GaN heterojunctions
  • Deep traps
  • Irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Pearton, S. J., Kolin, N. G., ... Lee, I-H. (2006). Neutron irradiation effects in AlGaN/GaN heterojunctions. Physica B: Condensed Matter, 376-377(1), 523-526. https://doi.org/10.1016/j.physb.2005.12.133

Neutron irradiation effects in AlGaN/GaN heterojunctions. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Pearton, S. J.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Skowronski, M.; Lee, In-Hwan.

In: Physica B: Condensed Matter, Vol. 376-377, No. 1, 01.04.2006, p. 523-526.

Research output: Contribution to journalConference article

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Pearton, SJ, Kolin, NG, Merkurisov, DI, Boiko, VM, Skowronski, M & Lee, I-H 2006, 'Neutron irradiation effects in AlGaN/GaN heterojunctions', Physica B: Condensed Matter, vol. 376-377, no. 1, pp. 523-526. https://doi.org/10.1016/j.physb.2005.12.133
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Kolin NG et al. Neutron irradiation effects in AlGaN/GaN heterojunctions. Physica B: Condensed Matter. 2006 Apr 1;376-377(1):523-526. https://doi.org/10.1016/j.physb.2005.12.133
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Markov, A. V. ; Pearton, S. J. ; Kolin, N. G. ; Merkurisov, D. I. ; Boiko, V. M. ; Skowronski, M. ; Lee, In-Hwan. / Neutron irradiation effects in AlGaN/GaN heterojunctions. In: Physica B: Condensed Matter. 2006 ; Vol. 376-377, No. 1. pp. 523-526.
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AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Pearton, S. J.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Skowronski, M.

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N2 - It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

AB - It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

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