Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

Byung Jae Kim, Hong Yeol Kim, Ji Hyun Kim, Soohwan Jang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5×100 μm2 gate were irradiated with a dose of 2.8×1011 cm-2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.

Original languageEnglish
Pages (from-to)205-207
Number of pages3
JournalJournal of Crystal Growth
Volume326
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

    Fingerprint

Keywords

  • A1. Neutron irradiation
  • B1. GaN
  • B1. SiC
  • B3. High electron mobility transistor

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this