Neutron radiation effects in epitaxially laterally overgrown GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, In-Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

Original languageEnglish
Pages (from-to)1320-1325
Number of pages6
JournalJournal of Electronic Materials
Volume36
Issue number10
DOIs
Publication statusPublished - 2007 Oct 1
Externally publishedYes

Fingerprint

Organic Chemicals
Electron traps
Radiation effects
Organic chemicals
radiation effects
metalorganic chemical vapor deposition
Chemical vapor deposition
Neutrons
Metals
traps
neutrons
Induced currents
Fermi level
Masks
Electron beams
electrons
masks
Activation energy
Irradiation
electron beams

Keywords

  • ELOG
  • GaN
  • Neutron irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yakimov, E. B., Vergeles, P. S., ... Pearton, S. J. (2007). Neutron radiation effects in epitaxially laterally overgrown GaN films. Journal of Electronic Materials, 36(10), 1320-1325. https://doi.org/10.1007/s11664-007-0203-8

Neutron radiation effects in epitaxially laterally overgrown GaN films. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Yakimov, E. B.; Vergeles, P. S.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Lee, In-Hwan; Lee, Cheul Ro; Pearton, S. J.

In: Journal of Electronic Materials, Vol. 36, No. 10, 01.10.2007, p. 1320-1325.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Yakimov, EB, Vergeles, PS, Kolin, NG, Merkurisov, DI, Boiko, VM, Lee, I-H, Lee, CR & Pearton, SJ 2007, 'Neutron radiation effects in epitaxially laterally overgrown GaN films', Journal of Electronic Materials, vol. 36, no. 10, pp. 1320-1325. https://doi.org/10.1007/s11664-007-0203-8
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yakimov EB, Vergeles PS et al. Neutron radiation effects in epitaxially laterally overgrown GaN films. Journal of Electronic Materials. 2007 Oct 1;36(10):1320-1325. https://doi.org/10.1007/s11664-007-0203-8
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Markov, A. V. ; Yakimov, E. B. ; Vergeles, P. S. ; Kolin, N. G. ; Merkurisov, D. I. ; Boiko, V. M. ; Lee, In-Hwan ; Lee, Cheul Ro ; Pearton, S. J. / Neutron radiation effects in epitaxially laterally overgrown GaN films. In: Journal of Electronic Materials. 2007 ; Vol. 36, No. 10. pp. 1320-1325.
@article{50bda502925b47b7ae80ae7c70f2e541,
title = "Neutron radiation effects in epitaxially laterally overgrown GaN films",
abstract = "Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.",
keywords = "ELOG, GaN, Neutron irradiation",
author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Yakimov, {E. B.} and Vergeles, {P. S.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and In-Hwan Lee and Lee, {Cheul Ro} and Pearton, {S. J.}",
year = "2007",
month = "10",
day = "1",
doi = "10.1007/s11664-007-0203-8",
language = "English",
volume = "36",
pages = "1320--1325",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "10",

}

TY - JOUR

T1 - Neutron radiation effects in epitaxially laterally overgrown GaN films

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Yakimov, E. B.

AU - Vergeles, P. S.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Lee, In-Hwan

AU - Lee, Cheul Ro

AU - Pearton, S. J.

PY - 2007/10/1

Y1 - 2007/10/1

N2 - Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

AB - Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

KW - ELOG

KW - GaN

KW - Neutron irradiation

UR - http://www.scopus.com/inward/record.url?scp=34848842468&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34848842468&partnerID=8YFLogxK

U2 - 10.1007/s11664-007-0203-8

DO - 10.1007/s11664-007-0203-8

M3 - Article

AN - SCOPUS:34848842468

VL - 36

SP - 1320

EP - 1325

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 10

ER -