New lateral insulated-gate bipolar transistor on silicon-on-insulator

Woo Beom Choi, Woong Je Sung, Chun Il Park, Sangsig Kim, Man Young Sung

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

Original languageEnglish
Pages (from-to)645-648
Number of pages4
JournalJournal of the Korean Physical Society
Volume40
Issue number4
Publication statusPublished - 2002 Apr 1

Fingerprint

latch-up
bipolar transistors
insulators
silicon
accumulators
current density
electric potential
electrons

Keywords

  • Dual-collector structure
  • Latch-up
  • LIGBT
  • SOI

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

New lateral insulated-gate bipolar transistor on silicon-on-insulator. / Choi, Woo Beom; Sung, Woong Je; Park, Chun Il; Kim, Sangsig; Sung, Man Young.

In: Journal of the Korean Physical Society, Vol. 40, No. 4, 01.04.2002, p. 645-648.

Research output: Contribution to journalArticle

Choi, Woo Beom ; Sung, Woong Je ; Park, Chun Il ; Kim, Sangsig ; Sung, Man Young. / New lateral insulated-gate bipolar transistor on silicon-on-insulator. In: Journal of the Korean Physical Society. 2002 ; Vol. 40, No. 4. pp. 645-648.
@article{c2a1d73ae0aa48e2a4212d0c9d77b4c8,
title = "New lateral insulated-gate bipolar transistor on silicon-on-insulator",
abstract = "To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.",
keywords = "Dual-collector structure, Latch-up, LIGBT, SOI",
author = "Choi, {Woo Beom} and Sung, {Woong Je} and Park, {Chun Il} and Sangsig Kim and Sung, {Man Young}",
year = "2002",
month = "4",
day = "1",
language = "English",
volume = "40",
pages = "645--648",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

TY - JOUR

T1 - New lateral insulated-gate bipolar transistor on silicon-on-insulator

AU - Choi, Woo Beom

AU - Sung, Woong Je

AU - Park, Chun Il

AU - Kim, Sangsig

AU - Sung, Man Young

PY - 2002/4/1

Y1 - 2002/4/1

N2 - To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

AB - To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

KW - Dual-collector structure

KW - Latch-up

KW - LIGBT

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=0036012668&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036012668&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036012668

VL - 40

SP - 645

EP - 648

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -