Abstract
A new lead-free piezoelectric film consisting of Sr2NaNb4O13 − (SNNO−) and TiNbO5 − (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.
| Original language | English |
|---|---|
| Journal | Ceramics International |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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Keywords
- Electrophoresis
- Lead-free piezoelectric film
- Low-temperature process
- Metal-oxide nanosheets
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature. / Im, Mir; Lee, Woong Hee; Kweon, Sang Hyo; Nahm, Sahn.
In: Ceramics International, 01.01.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature
AU - Im, Mir
AU - Lee, Woong Hee
AU - Kweon, Sang Hyo
AU - Nahm, Sahn
PY - 2019/1/1
Y1 - 2019/1/1
N2 - A new lead-free piezoelectric film consisting of Sr2NaNb4O13 − (SNNO−) and TiNbO5 − (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.
AB - A new lead-free piezoelectric film consisting of Sr2NaNb4O13 − (SNNO−) and TiNbO5 − (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.
KW - Electrophoresis
KW - Lead-free piezoelectric film
KW - Low-temperature process
KW - Metal-oxide nanosheets
UR - http://www.scopus.com/inward/record.url?scp=85069606538&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069606538&partnerID=8YFLogxK
U2 - 10.1016/j.ceramint.2019.07.180
DO - 10.1016/j.ceramint.2019.07.180
M3 - Article
AN - SCOPUS:85069606538
JO - Ceramics International
JF - Ceramics International
SN - 0272-8842
ER -