New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature

Mir Im, Woong Hee Lee, Sang Hyo Kweon, Sahn Nahm

Research output: Contribution to journalArticle

Abstract

A new lead-free piezoelectric film consisting of Sr2NaNb4O13 (SNNO) and TiNbO5 (TNO) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO and TNO (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.

Original languageEnglish
JournalCeramics International
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Nanosheets
Oxides
Lead
Metals
Thin films
Temperature
Ferroelectric materials
Electric fields
Polarization
Flexible electronics
Growth temperature
Hysteresis loops
Electrophoresis
Microscopic examination
Permittivity

Keywords

  • Electrophoresis
  • Lead-free piezoelectric film
  • Low-temperature process
  • Metal-oxide nanosheets

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature. / Im, Mir; Lee, Woong Hee; Kweon, Sang Hyo; Nahm, Sahn.

In: Ceramics International, 01.01.2019.

Research output: Contribution to journalArticle

@article{a972dd31acfb44b2bfb797c431e9f21a,
title = "New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature",
abstract = "A new lead-free piezoelectric film consisting of Sr2NaNb4O13 − (SNNO−) and TiNbO5 − (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.",
keywords = "Electrophoresis, Lead-free piezoelectric film, Low-temperature process, Metal-oxide nanosheets",
author = "Mir Im and Lee, {Woong Hee} and Kweon, {Sang Hyo} and Sahn Nahm",
year = "2019",
month = "1",
day = "1",
doi = "10.1016/j.ceramint.2019.07.180",
language = "English",
journal = "Ceramics International",
issn = "0272-8842",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - New lead-free piezoelectric thin film fabricated using metal-oxide nanosheets at low temperature

AU - Im, Mir

AU - Lee, Woong Hee

AU - Kweon, Sang Hyo

AU - Nahm, Sahn

PY - 2019/1/1

Y1 - 2019/1/1

N2 - A new lead-free piezoelectric film consisting of Sr2NaNb4O13 − (SNNO−) and TiNbO5 − (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.

AB - A new lead-free piezoelectric film consisting of Sr2NaNb4O13 − (SNNO−) and TiNbO5 − (TNO−) nanosheets was fabricated via electrophoresis. SNNO and TNO films display paraelectric polarization versus electric field (P-E) loops. However, a new film composed of a mix of SNNO− and TNO− (S/T) nanosheets displayed a ferroelectric P-E hysteresis loop with large maximum polarization (18.7 μC/cm2), remnant polarization (7.7 μC/cm2), and a coercive electric field (86 kV/cm). The interfaces formed between the SNNO and TNO layers induced ferroelectric properties in the S/T film through the occurrence of polar distortion and octahedral tilting in the film. Ferroelectric properties were also observed in piezoelectric force microscopy images of the S/T film, which showed 90° domains after the removal of the applied electric field. The dielectric constant of the S/T film was 70, which is higher than those of SNNO and TNO films, indicating that the S/T film is a ferroelectric material. The piezoelectric strain constant of the S/T film was 156 p.m./V and promising insulating properties were observed therein. The growth temperature of the S/T film was low (300 °C), suggesting that the S/T film can be used for flexible electronic devices.

KW - Electrophoresis

KW - Lead-free piezoelectric film

KW - Low-temperature process

KW - Metal-oxide nanosheets

UR - http://www.scopus.com/inward/record.url?scp=85069606538&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069606538&partnerID=8YFLogxK

U2 - 10.1016/j.ceramint.2019.07.180

DO - 10.1016/j.ceramint.2019.07.180

M3 - Article

AN - SCOPUS:85069606538

JO - Ceramics International

JF - Ceramics International

SN - 0272-8842

ER -