New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journalLetterpeer-review

10 Citations (Scopus)

Abstract

A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (μbulk) and flat-band voltage (Vfb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/gm2) vs gate voltage in the partially depleted operation regime (Vth < Vg < Vfb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for gm of JLT devices.

Original languageEnglish
Pages (from-to)139-141
Number of pages3
JournalSolid-State Electronics
Volume89
DOIs
Publication statusPublished - 2013

Keywords

  • 2D numerical simulation
  • Bulk channel mobility
  • Extraction method
  • Flat-band voltage
  • Junctionless transistors (JLTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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