New packaging method of field emission display using silicon-to-ITO coated glass bonding

Jee Won Jeong, Byeong Kwon Ju, Woo Beom Choi, Duck Jung Lee, Yun-Hi Lee, Nam Yang Lee, Seong Jae Jung, Doo Jin Choi, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages711-715
Number of pages5
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

Fingerprint

ITO (semiconductors)
packaging
field emission
glass
silicon
direct current
lithium oxides
tensile tests
ions
emitters
mass spectroscopy
lithium
evaporation
wafers
electron beams
electric potential

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Jeong, J. W., Ju, B. K., Choi, W. B., Lee, D. J., Lee, Y-H., Lee, N. Y., ... Oh, M. H. (1997). New packaging method of field emission display using silicon-to-ITO coated glass bonding. In Anon (Ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 711-715). Piscataway, NJ, United States: IEEE.

New packaging method of field emission display using silicon-to-ITO coated glass bonding. / Jeong, Jee Won; Ju, Byeong Kwon; Choi, Woo Beom; Lee, Duck Jung; Lee, Yun-Hi; Lee, Nam Yang; Jung, Seong Jae; Choi, Doo Jin; Oh, Myung Hwan.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. ed. / Anon. Piscataway, NJ, United States : IEEE, 1997. p. 711-715.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jeong, JW, Ju, BK, Choi, WB, Lee, DJ, Lee, Y-H, Lee, NY, Jung, SJ, Choi, DJ & Oh, MH 1997, New packaging method of field emission display using silicon-to-ITO coated glass bonding. in Anon (ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 711-715, Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, 97/8/17.
Jeong JW, Ju BK, Choi WB, Lee DJ, Lee Y-H, Lee NY et al. New packaging method of field emission display using silicon-to-ITO coated glass bonding. In Anon, editor, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1997. p. 711-715
Jeong, Jee Won ; Ju, Byeong Kwon ; Choi, Woo Beom ; Lee, Duck Jung ; Lee, Yun-Hi ; Lee, Nam Yang ; Jung, Seong Jae ; Choi, Doo Jin ; Oh, Myung Hwan. / New packaging method of field emission display using silicon-to-ITO coated glass bonding. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. editor / Anon. Piscataway, NJ, United States : IEEE, 1997. pp. 711-715
@inproceedings{0a6890e99e5e40c982906a3556ba615e,
title = "New packaging method of field emission display using silicon-to-ITO coated glass bonding",
abstract = "Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.",
author = "Jeong, {Jee Won} and Ju, {Byeong Kwon} and Choi, {Woo Beom} and Lee, {Duck Jung} and Yun-Hi Lee and Lee, {Nam Yang} and Jung, {Seong Jae} and Choi, {Doo Jin} and Oh, {Myung Hwan}",
year = "1997",
month = "12",
day = "1",
language = "English",
pages = "711--715",
editor = "Anon",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - New packaging method of field emission display using silicon-to-ITO coated glass bonding

AU - Jeong, Jee Won

AU - Ju, Byeong Kwon

AU - Choi, Woo Beom

AU - Lee, Duck Jung

AU - Lee, Yun-Hi

AU - Lee, Nam Yang

AU - Jung, Seong Jae

AU - Choi, Doo Jin

AU - Oh, Myung Hwan

PY - 1997/12/1

Y1 - 1997/12/1

N2 - Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

AB - Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

UR - http://www.scopus.com/inward/record.url?scp=0031364502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031364502&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031364502

SP - 711

EP - 715

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

ER -