New packaging method of field emission display using silicon-to-ITO coated glass bonding

Jee Won Jeong, Byeong Kwon Ju, Woo Beom Choi, Duck Jung Lee, Yun-Hi Lee, Nam Yang Lee, Seong Jae Jung, Doo Jin Choi, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon to In 2O 3:Sn (ITO) coated glass bonding has been developed for packaging of Field Emitter Arrays (FEAs) fabricated on silicon wafer. This paper will focus on a processing and results for silicon to ITO coated glass bonding using anodic bonding process. Lithium oxide doped layer was deposited on ITO coated glass by electron beam evaporation. Silicon to ITO coated glass bonding occurs in the range of temperatures from 260 °C to 320 °C with an applied voltages from 140 V DC to 220 V DC. The bonding strength obtained from tensile test was about 10 MPa under condition of 180 V DC in 320 °C. In order to study the role of the lithium ions in bonding mechanism, secondary ion mass spectroscopy (SIMS) analysis was carried out. The possibility of the packaging method of FED is proposed.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages711-715
Number of pages5
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

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ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Jeong, J. W., Ju, B. K., Choi, W. B., Lee, D. J., Lee, Y-H., Lee, N. Y., Jung, S. J., Choi, D. J., & Oh, M. H. (1997). New packaging method of field emission display using silicon-to-ITO coated glass bonding. In Anon (Ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 711-715). IEEE.