Abstract
The glass-to-glass electrostatic bonding using the ITO and amorphous silicon layer was developed for the plasma display panel (PDP) package. The bonding was successfully performed at 180°C with 250 Vdc. From the XPS results, the surface's silicon consumed some portion of Si into Si-O during the electrostatic bonding process at the interface. The vacuum level of the panel was maintained continuously for 160 hr. The light emission was observed successfully from the packaged 3.6 in. ac-PDP with 8 mm thickness by this method.
Original language | English |
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Pages (from-to) | 1381-1384 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2001 Jul |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 2000 Oct 15 → 2000 Oct 18 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering