Ni implantation-induced enhancement of the crystallisation of amorphous Si

Young Woo Ok, Tae Yeon Seong, Chel Jong Choi, K. N. Tu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.

Original languageEnglish
Pages (from-to)979-985
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume17
Issue number12
DOIs
Publication statusPublished - 2006 Dec

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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