Nickel foam as a substrate for III-nitride nanowire growth

Michael A. Mastro, Neeraj Nepal, Fritz Kub, Jennifer K. Hite, Jihyun Kim, Charles R. Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.

Original languageEnglish
Title of host publicationCompound Semiconductors
Subtitle of host publicationThin-Film Photovoltaics, LEDs, and Smart Energy Controls
Pages311-316
Number of pages6
DOIs
Publication statusPublished - 2013
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2013 Apr 12013 Apr 5

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1538
ISSN (Print)0272-9172

Other

Other2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period13/4/113/4/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Mastro, M. A., Nepal, N., Kub, F., Hite, J. K., Kim, J., & Eddy, C. R. (2013). Nickel foam as a substrate for III-nitride nanowire growth. In Compound Semiconductors: Thin-Film Photovoltaics, LEDs, and Smart Energy Controls (pp. 311-316). (Materials Research Society Symposium Proceedings; Vol. 1538). https://doi.org/10.1557/opl.2013.504