Abstract
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 311-316 |
| Number of pages | 6 |
| Volume | 1538 |
| DOIs | |
| Publication status | Published - 2013 Dec 12 |
| Event | 2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5 |
Other
| Other | 2013 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 13/4/1 → 13/4/5 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Nickel foam as a substrate for III-nitride nanowire growth. / Mastro, Michael A.; Nepal, Neeraj; Kub, Fritz; Hite, Jennifer K.; Kim, Ji Hyun; Eddy, Charles R.
Materials Research Society Symposium Proceedings. Vol. 1538 2013. p. 311-316.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Nickel foam as a substrate for III-nitride nanowire growth
AU - Mastro, Michael A.
AU - Nepal, Neeraj
AU - Kub, Fritz
AU - Hite, Jennifer K.
AU - Kim, Ji Hyun
AU - Eddy, Charles R.
PY - 2013/12/12
Y1 - 2013/12/12
N2 - This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
AB - This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
UR - http://www.scopus.com/inward/record.url?scp=84889633019&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84889633019&partnerID=8YFLogxK
U2 - 10.1557/opl.2013.504
DO - 10.1557/opl.2013.504
M3 - Conference contribution
SN - 9781605115153
VL - 1538
SP - 311
EP - 316
BT - Materials Research Society Symposium Proceedings
ER -