Abstract
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
| Original language | English |
|---|---|
| Title of host publication | Compound Semiconductors |
| Subtitle of host publication | Thin-Film Photovoltaics, LEDs, and Smart Energy Controls |
| Pages | 311-316 |
| Number of pages | 6 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1538 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2013 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 13/4/1 → 13/4/5 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Mastro, M. A., Nepal, N., Kub, F., Hite, J. K., Kim, J., & Eddy, C. R. (2013). Nickel foam as a substrate for III-nitride nanowire growth. In Compound Semiconductors: Thin-Film Photovoltaics, LEDs, and Smart Energy Controls (pp. 311-316). (Materials Research Society Symposium Proceedings; Vol. 1538). https://doi.org/10.1557/opl.2013.504