TY - GEN
T1 - Nickel foam as a substrate for III-nitride nanowire growth
AU - Mastro, Michael A.
AU - Nepal, Neeraj
AU - Kub, Fritz
AU - Hite, Jennifer K.
AU - Kim, Jihyun
AU - Eddy, Charles R.
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
AB - This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
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U2 - 10.1557/opl.2013.504
DO - 10.1557/opl.2013.504
M3 - Conference contribution
AN - SCOPUS:84889633019
SN - 9781605115153
T3 - Materials Research Society Symposium Proceedings
SP - 311
EP - 316
BT - Compound Semiconductors
T2 - 2013 MRS Spring Meeting
Y2 - 1 April 2013 through 5 April 2013
ER -