Nickel foam as a substrate for III-nitride nanowire growth

Michael A. Mastro; Neeraj Nepal; Fritz Kub; Jennifer K. Hite; Ji Hyun Kim; Charles R. Eddy

doi:10.1557/opl.2013.504

Nickel foam as a substrate for III-nitride nanowire growth

Michael A. Mastro, Neeraj Nepal, Fritz Kub, Jennifer K. Hite, Ji Hyun Kim, Charles R. Eddy

Department of Chemical and Biological Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	311-316
Number of pages	6
Volume	1538
DOIs	https://doi.org/10.1557/opl.2013.504
Publication status	Published - 2013 Dec 12
Event	2013 MRS Spring Meeting - San Francisco, CA, United States Duration: 2013 Apr 1 → 2013 Apr 5

Other

Other	2013 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	13/4/1 → 13/4/5

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

Cite this

Mastro, M. A., Nepal, N., Kub, F., Hite, J. K., Kim, J. H., & Eddy, C. R. (2013). Nickel foam as a substrate for III-nitride nanowire growth. In Materials Research Society Symposium Proceedings (Vol. 1538, pp. 311-316) https://doi.org/10.1557/opl.2013.504

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AU - Kim, Ji Hyun

AU - Eddy, Charles R.

PY - 2013/12/12

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AB - This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.

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DO - 10.1557/opl.2013.504

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Access to Document

10.1557/opl.2013.504