Nickel-silicidation process using hydrogen implantation

C. J. Choi, S. A. Song, Y. W. Ok, T. Y. Seong

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.

Original languageEnglish
Pages (from-to)391-393
Number of pages3
JournalElectronics Letters
Volume40
Issue number6
DOIs
Publication statusPublished - 2004 Mar 18
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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