NiO Exchange Bias Layers Grown by Direct Ion Beam Sputtering of a Nickel Oxide Target

Richard P. Michel, Alison Chaiken, Young-geun Kim, Lantz E. Johnson

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

A new processes for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.

Original languageEnglish
Pages (from-to)4651-4653
Number of pages3
JournalIEEE Transactions on Magnetics
Volume32
Issue number5 PART 2
DOIs
Publication statusPublished - 1996 Dec 1
Externally publishedYes

Fingerprint

Nickel oxide
nickel oxides
Ion beams
Sputtering
sputtering
ion beams
Exchange coupling
Reactive sputtering
Buffer layers
Magnetron sputtering
Magnetic properties
magnetron sputtering
buffers
Single crystals
Vacuum
magnetic properties
vacuum
temperature dependence
single crystals
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

NiO Exchange Bias Layers Grown by Direct Ion Beam Sputtering of a Nickel Oxide Target. / Michel, Richard P.; Chaiken, Alison; Kim, Young-geun; Johnson, Lantz E.

In: IEEE Transactions on Magnetics, Vol. 32, No. 5 PART 2, 01.12.1996, p. 4651-4653.

Research output: Contribution to journalArticle

Michel, Richard P. ; Chaiken, Alison ; Kim, Young-geun ; Johnson, Lantz E. / NiO Exchange Bias Layers Grown by Direct Ion Beam Sputtering of a Nickel Oxide Target. In: IEEE Transactions on Magnetics. 1996 ; Vol. 32, No. 5 PART 2. pp. 4651-4653.
@article{1ee202ab89434181adaaa222150a291c,
title = "NiO Exchange Bias Layers Grown by Direct Ion Beam Sputtering of a Nickel Oxide Target",
abstract = "A new processes for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.",
author = "Michel, {Richard P.} and Alison Chaiken and Young-geun Kim and Johnson, {Lantz E.}",
year = "1996",
month = "12",
day = "1",
doi = "10.1109/20.539107",
language = "English",
volume = "32",
pages = "4651--4653",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5 PART 2",

}

TY - JOUR

T1 - NiO Exchange Bias Layers Grown by Direct Ion Beam Sputtering of a Nickel Oxide Target

AU - Michel, Richard P.

AU - Chaiken, Alison

AU - Kim, Young-geun

AU - Johnson, Lantz E.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - A new processes for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.

AB - A new processes for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.

UR - http://www.scopus.com/inward/record.url?scp=0030245457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030245457&partnerID=8YFLogxK

U2 - 10.1109/20.539107

DO - 10.1109/20.539107

M3 - Article

AN - SCOPUS:0030245457

VL - 32

SP - 4651

EP - 4653

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 5 PART 2

ER -