Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

M. H. Cho, K. B. Chung, C. N. Whang, D. H. Ko, Jong Heun Lee, N. I. Lee

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The characteristics of nitrided Hf O2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an N H3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided Hf O2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900 °C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to Hf O2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.

Original languageEnglish
Article number202902
JournalApplied Physics Letters
Volume88
Issue number20
DOIs
Publication statusPublished - 2006 May 15
Externally publishedYes

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annealing
temperature
energy levels

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, M. H., Chung, K. B., Whang, C. N., Ko, D. H., Lee, J. H., & Lee, N. I. (2006). Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment. Applied Physics Letters, 88(20), [202902]. https://doi.org/10.1063/1.2202390

Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment. / Cho, M. H.; Chung, K. B.; Whang, C. N.; Ko, D. H.; Lee, Jong Heun; Lee, N. I.

In: Applied Physics Letters, Vol. 88, No. 20, 202902, 15.05.2006.

Research output: Contribution to journalArticle

Cho, M. H. ; Chung, K. B. ; Whang, C. N. ; Ko, D. H. ; Lee, Jong Heun ; Lee, N. I. / Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment. In: Applied Physics Letters. 2006 ; Vol. 88, No. 20.
@article{2f47d35f693c45d1ad16665bbed8fb46,
title = "Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment",
abstract = "The characteristics of nitrided Hf O2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an N H3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided Hf O2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900 °C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to Hf O2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.",
author = "Cho, {M. H.} and Chung, {K. B.} and Whang, {C. N.} and Ko, {D. H.} and Lee, {Jong Heun} and Lee, {N. I.}",
year = "2006",
month = "5",
day = "15",
doi = "10.1063/1.2202390",
language = "English",
volume = "88",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Nitridation for HfO2 high-k films on Si by an NH3 annealing treatment

AU - Cho, M. H.

AU - Chung, K. B.

AU - Whang, C. N.

AU - Ko, D. H.

AU - Lee, Jong Heun

AU - Lee, N. I.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - The characteristics of nitrided Hf O2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an N H3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided Hf O2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900 °C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to Hf O2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.

AB - The characteristics of nitrided Hf O2 films suggest that the diffusion of Si from the Si substrate to the film surface is induced by annealing in an N H3 ambient and that the incorporation of N is closely related to the diffusion of Si. Changes in the core-level energy state of the N 1s peaks of nitrided Hf O2 films indicate that the quantity of N incorporated into the film drastically increases with increasing annealing temperature, especially at temperatures over 900 °C. The incorporated N is mostly bonded to Si that diffused from the Si substrate into the film, while some N is incorporated to Hf O2 at high annealing temperature. Some molecular N2 is generated in the film, which is easily diffused out after additional annealing. Moreover, the chemisorbed N in the film is not completely stable, compared to that at the interfacial region: i.e., the N in the film predominantly out diffuses from the film after additional annealing in a N2 ambient.

UR - http://www.scopus.com/inward/record.url?scp=33646864617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646864617&partnerID=8YFLogxK

U2 - 10.1063/1.2202390

DO - 10.1063/1.2202390

M3 - Article

AN - SCOPUS:33646864617

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202902

ER -