Nitridation of Si(111)-7×7 surface by low energy nitrogen ions

STM investigation

Jeong Sook Ha, Kang Ho Park, Wan Soo Yun, El Hang Lee, Seong Ju Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The surface structure of Si(111) post-annealed at 980 °C after nitrogen ion induced nitridation has been investigated by using a scanning tunneling microscope (STM) and low energy electron diffraction (LEED). The LEED and STM results indicated the formation of ordered domain of quadruplet structure in the silicon nitride layer. The LEED pattern taken from the nitrated Si(111) surface showed a coexistence of 7×7 domain with quadruplet one. In the STM image taken from the same surface, a three directional periodicity with a periodic arrangement of white protrusions was observed in the local area of silicon nitride island and its symmetry directions were rotated about 10° with respect to those of Si(111) surface. In addition to the quadruplet structure of the silicon nitride island, meta-stable structures such as 9×9, c(4×2), and 2×2 as well as 7×7 phase boundaries were observed to have been formed on the Si(111) surface during the rapid cooling of nitrated surface from the post-annealing temperature of 980 °C. The investigation of the surface structure of nitrated Si(111) showed that the surface nitrated at high temperature had better epitaxial nitride layer than that post-annealed after nitridation at room temperature.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages297-302
Number of pages6
Volume448
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/6

Fingerprint

Nitridation
Microscopes
Nitrogen
Ions
Scanning
Low energy electron diffraction
Silicon nitride
Surface structure
Phase boundaries
Nitrides
Temperature
Diffraction patterns
Annealing
Cooling
silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ha, J. S., Park, K. H., Yun, W. S., Lee, E. H., & Park, S. J. (1997). Nitridation of Si(111)-7×7 surface by low energy nitrogen ions: STM investigation. In Materials Research Society Symposium - Proceedings (Vol. 448, pp. 297-302). Materials Research Society.

Nitridation of Si(111)-7×7 surface by low energy nitrogen ions : STM investigation. / Ha, Jeong Sook; Park, Kang Ho; Yun, Wan Soo; Lee, El Hang; Park, Seong Ju.

Materials Research Society Symposium - Proceedings. Vol. 448 Materials Research Society, 1997. p. 297-302.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ha, JS, Park, KH, Yun, WS, Lee, EH & Park, SJ 1997, Nitridation of Si(111)-7×7 surface by low energy nitrogen ions: STM investigation. in Materials Research Society Symposium - Proceedings. vol. 448, Materials Research Society, pp. 297-302, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 96/12/2.
Ha JS, Park KH, Yun WS, Lee EH, Park SJ. Nitridation of Si(111)-7×7 surface by low energy nitrogen ions: STM investigation. In Materials Research Society Symposium - Proceedings. Vol. 448. Materials Research Society. 1997. p. 297-302
Ha, Jeong Sook ; Park, Kang Ho ; Yun, Wan Soo ; Lee, El Hang ; Park, Seong Ju. / Nitridation of Si(111)-7×7 surface by low energy nitrogen ions : STM investigation. Materials Research Society Symposium - Proceedings. Vol. 448 Materials Research Society, 1997. pp. 297-302
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