Abstract
We present an electroforming transparent conductive electrode that enables current injection from metal to semiconductor, by forming conducting filaments (CFs) in wide-bandgap materials such as silicon nitride, and employ it as an n-type electrode for GaN-based vertical light-emitting diodes to investigate the effect of the CF densities on the electrical and optical characteristics in VLEDs.
| Original language | English |
|---|---|
| Title of host publication | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2 |
| ISBN (Print) | 9781467371094 |
| DOIs | |
| Publication status | Published - 2016 Jan 7 |
| Event | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of Duration: 2015 Aug 24 → 2015 Aug 28 |
Other
| Other | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
|---|---|
| Country | Korea, Republic of |
| City | Busan |
| Period | 15/8/24 → 15/8/28 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
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Lee, B. R., Kim, K. H., Lee, T. H., & Kim, T. G. (2016). Nitride-based light-emitting diodes using conducting filament embedded TCO. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 (Vol. 2). [7376029] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7376029