Nitrogen incorporation in GaAsN grown by chemical beam epitaxy

Y. Ohshita, K. Nishimura, H. S. Lee, N. Kojima, I. Gono, H. Suzuki, M. Yamaguchi

Research output: Contribution to conferencePaper

Abstract

Chemical beam epitaxial growth system has been developed for achieving good quality InGaAsN thin film, which will be adopted as a third material of four-junction tandem solar cell. Methylhydrazine, which was used as a N source, was decomposed on the growing surface. Between 400-420°C, N concentration had slight temperature dependence. The adsorbed N-related molecules hindered the decomposition of Ga precursor TEG on the surface, resulting in the decrease of the growth. Above 440°C, the number of N incorporated in the grown film swiftly decreased. The growth rate had slight temperature dependence and the quality of grown film became deteriorated although the amount of residual N decreased.

Original languageEnglish
Pages272-277
Number of pages6
Publication statusPublished - 2005
Externally publishedYes
Event207th ECS Meeting - Quebec, Canada
Duration: 2005 May 162005 May 20

Conference

Conference207th ECS Meeting
CountryCanada
CityQuebec
Period05/5/1605/5/20

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ohshita, Y., Nishimura, K., Lee, H. S., Kojima, N., Gono, I., Suzuki, H., & Yamaguchi, M. (2005). Nitrogen incorporation in GaAsN grown by chemical beam epitaxy. 272-277. Paper presented at 207th ECS Meeting, Quebec, Canada.