Chemical beam epitaxial growth system has been developed for achieving good quality InGaAsN thin film, which will be adopted as a third material of four-junction tandem solar cell. Methylhydrazine, which was used as a N source, was decomposed on the growing surface. Between 400-420°C, N concentration had slight temperature dependence. The adsorbed N-related molecules hindered the decomposition of Ga precursor TEG on the surface, resulting in the decrease of the growth. Above 440°C, the number of N incorporated in the grown film swiftly decreased. The growth rate had slight temperature dependence and the quality of grown film became deteriorated although the amount of residual N decreased.
|Number of pages||6|
|Publication status||Published - 2005 Dec 1|
|Event||207th ECS Meeting - Quebec, Canada|
Duration: 2005 May 16 → 2005 May 20
|Conference||207th ECS Meeting|
|Period||05/5/16 → 05/5/20|
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