Nitrogen incorporation in GaInNAs grown by chemical beam epitaxy for multi-junction tandem solar cell

K. Nishimura, Haeseok Lee, H. Suzuki, I. Gono, N. Kojima, Y. Ohshita, M. Yamaguchi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

GaInNAs films for the ultra high-efficiency (>40%) 4-junction tandem space solar cells ((Al)GaInP/GaAs/ GaInNAs/Ge) have been grown by using chemical beam epitaxy (CBE) in this study. In the growth of GaInNAs films, the selection of nitrogen source and understanding of nitrogen incorporation is important because nitrogen is play an important role in the crystallization and electrical properties of III-V-N compound materials. A proper nitrogen source between monomethylhydrazine (MMHy) and dimethylhydrazine (DMHy) was investigated, and the nitrogen incorporation in samples grown with MMHy was higher. From the dependence of nitrogen concentration on the substrate temperature, three distinct regions were observed, even in the nitrogen concentration usually decreased with increasing the substrate temperature, and a low FWHM value was obtained at an intermediate temperature. In addition, the dependence of the nitrogen incorporation on the ratio of N/(N+As) was investigated, and at a low temperature, the nitrogen concentration increased with increasing the ratio of N/(N+As). From these results, the nitrogen incorporation in GaInNAs films grown with the substrate temperature and the ratio of N/V elements in CBE technique is clarified, and the relationships between the nitrogen incorporation and crystallization of GaInNAs are clear.

Original languageEnglish
Pages (from-to)722-724
Number of pages3
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2005 Nov 30
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: 2005 Jan 32005 Jan 7

Fingerprint

Chemical beam epitaxy
Solar cells
Nitrogen
Substrates
Temperature
Crystallization
Full width at half maximum
Electric properties

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Nitrogen incorporation in GaInNAs grown by chemical beam epitaxy for multi-junction tandem solar cell. / Nishimura, K.; Lee, Haeseok; Suzuki, H.; Gono, I.; Kojima, N.; Ohshita, Y.; Yamaguchi, M.

In: Conference Record of the IEEE Photovoltaic Specialists Conference, 30.11.2005, p. 722-724.

Research output: Contribution to journalConference article

@article{8aa9c1228d804ebb839ac67798f933ad,
title = "Nitrogen incorporation in GaInNAs grown by chemical beam epitaxy for multi-junction tandem solar cell",
abstract = "GaInNAs films for the ultra high-efficiency (>40{\%}) 4-junction tandem space solar cells ((Al)GaInP/GaAs/ GaInNAs/Ge) have been grown by using chemical beam epitaxy (CBE) in this study. In the growth of GaInNAs films, the selection of nitrogen source and understanding of nitrogen incorporation is important because nitrogen is play an important role in the crystallization and electrical properties of III-V-N compound materials. A proper nitrogen source between monomethylhydrazine (MMHy) and dimethylhydrazine (DMHy) was investigated, and the nitrogen incorporation in samples grown with MMHy was higher. From the dependence of nitrogen concentration on the substrate temperature, three distinct regions were observed, even in the nitrogen concentration usually decreased with increasing the substrate temperature, and a low FWHM value was obtained at an intermediate temperature. In addition, the dependence of the nitrogen incorporation on the ratio of N/(N+As) was investigated, and at a low temperature, the nitrogen concentration increased with increasing the ratio of N/(N+As). From these results, the nitrogen incorporation in GaInNAs films grown with the substrate temperature and the ratio of N/V elements in CBE technique is clarified, and the relationships between the nitrogen incorporation and crystallization of GaInNAs are clear.",
author = "K. Nishimura and Haeseok Lee and H. Suzuki and I. Gono and N. Kojima and Y. Ohshita and M. Yamaguchi",
year = "2005",
month = "11",
day = "30",
language = "English",
pages = "722--724",
journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",
issn = "0160-8371",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Nitrogen incorporation in GaInNAs grown by chemical beam epitaxy for multi-junction tandem solar cell

AU - Nishimura, K.

AU - Lee, Haeseok

AU - Suzuki, H.

AU - Gono, I.

AU - Kojima, N.

AU - Ohshita, Y.

AU - Yamaguchi, M.

PY - 2005/11/30

Y1 - 2005/11/30

N2 - GaInNAs films for the ultra high-efficiency (>40%) 4-junction tandem space solar cells ((Al)GaInP/GaAs/ GaInNAs/Ge) have been grown by using chemical beam epitaxy (CBE) in this study. In the growth of GaInNAs films, the selection of nitrogen source and understanding of nitrogen incorporation is important because nitrogen is play an important role in the crystallization and electrical properties of III-V-N compound materials. A proper nitrogen source between monomethylhydrazine (MMHy) and dimethylhydrazine (DMHy) was investigated, and the nitrogen incorporation in samples grown with MMHy was higher. From the dependence of nitrogen concentration on the substrate temperature, three distinct regions were observed, even in the nitrogen concentration usually decreased with increasing the substrate temperature, and a low FWHM value was obtained at an intermediate temperature. In addition, the dependence of the nitrogen incorporation on the ratio of N/(N+As) was investigated, and at a low temperature, the nitrogen concentration increased with increasing the ratio of N/(N+As). From these results, the nitrogen incorporation in GaInNAs films grown with the substrate temperature and the ratio of N/V elements in CBE technique is clarified, and the relationships between the nitrogen incorporation and crystallization of GaInNAs are clear.

AB - GaInNAs films for the ultra high-efficiency (>40%) 4-junction tandem space solar cells ((Al)GaInP/GaAs/ GaInNAs/Ge) have been grown by using chemical beam epitaxy (CBE) in this study. In the growth of GaInNAs films, the selection of nitrogen source and understanding of nitrogen incorporation is important because nitrogen is play an important role in the crystallization and electrical properties of III-V-N compound materials. A proper nitrogen source between monomethylhydrazine (MMHy) and dimethylhydrazine (DMHy) was investigated, and the nitrogen incorporation in samples grown with MMHy was higher. From the dependence of nitrogen concentration on the substrate temperature, three distinct regions were observed, even in the nitrogen concentration usually decreased with increasing the substrate temperature, and a low FWHM value was obtained at an intermediate temperature. In addition, the dependence of the nitrogen incorporation on the ratio of N/(N+As) was investigated, and at a low temperature, the nitrogen concentration increased with increasing the ratio of N/(N+As). From these results, the nitrogen incorporation in GaInNAs films grown with the substrate temperature and the ratio of N/V elements in CBE technique is clarified, and the relationships between the nitrogen incorporation and crystallization of GaInNAs are clear.

UR - http://www.scopus.com/inward/record.url?scp=27944488821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944488821&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:27944488821

SP - 722

EP - 724

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

SN - 0160-8371

ER -