Abstract
Electrochemical metallization (ECM) threshold switches are in great demand for various applications such as next-generation logic technology, future memory, and neuromorphic computing. However, the instability of operation due to inherent filamentary randomness is a severe problem that is yet to be solved. Here, we propose a specially treated hafnium oxide (HfO x :N)-based ECM threshold switch with high reliability, low-voltage operation (0.2 V), high ON/OFF ratio (5 × 10 8 ), great endurance (10 6 ), and fast switching speed (1.5 μs at 2 V). The nitrogen ions in the HfO x :N layer assist confining the path of the metallic filament, which significantly suppresses filament randomness as well as reduces power consumption and alternating current response time. The feasibility of ECM threshold switches to logic applications, AND and OR, is first introduced. The ECM threshold switch has great potential to be utilized in complementary logic circuits because of its ultralow operation power consumption, high integrability using an array structure (4F 2 ), and fast switching characteristics. Furthermore, we have successfully verified its applicability to flexible electronics on polyethylene naphthalate films that can retain stable operation under considerable mechanical stress. We believe that this research paves the way to fabricate highly reliable ECM threshold switches for flexible complementary logic circuits with ultralow power consumption.
| Original language | English |
|---|---|
| Pages (from-to) | 9182-9189 |
| Number of pages | 8 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 11 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2019 Mar 6 |
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Keywords
- electrochemical metallization (ECM) threshold switch
- filament confinement technique
- flexible logic circuit
- nitrogen doping
- volatile switching
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits. / Park, Jae Hyeun; Kim, Seung Hwan; Kim, Seung Geun; Heo, Keun; Yu, Hyun-Yong.
In: ACS Applied Materials and Interfaces, Vol. 11, No. 9, 06.03.2019, p. 9182-9189.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits
AU - Park, Jae Hyeun
AU - Kim, Seung Hwan
AU - Kim, Seung Geun
AU - Heo, Keun
AU - Yu, Hyun-Yong
PY - 2019/3/6
Y1 - 2019/3/6
N2 - Electrochemical metallization (ECM) threshold switches are in great demand for various applications such as next-generation logic technology, future memory, and neuromorphic computing. However, the instability of operation due to inherent filamentary randomness is a severe problem that is yet to be solved. Here, we propose a specially treated hafnium oxide (HfO x :N)-based ECM threshold switch with high reliability, low-voltage operation (0.2 V), high ON/OFF ratio (5 × 10 8 ), great endurance (10 6 ), and fast switching speed (1.5 μs at 2 V). The nitrogen ions in the HfO x :N layer assist confining the path of the metallic filament, which significantly suppresses filament randomness as well as reduces power consumption and alternating current response time. The feasibility of ECM threshold switches to logic applications, AND and OR, is first introduced. The ECM threshold switch has great potential to be utilized in complementary logic circuits because of its ultralow operation power consumption, high integrability using an array structure (4F 2 ), and fast switching characteristics. Furthermore, we have successfully verified its applicability to flexible electronics on polyethylene naphthalate films that can retain stable operation under considerable mechanical stress. We believe that this research paves the way to fabricate highly reliable ECM threshold switches for flexible complementary logic circuits with ultralow power consumption.
AB - Electrochemical metallization (ECM) threshold switches are in great demand for various applications such as next-generation logic technology, future memory, and neuromorphic computing. However, the instability of operation due to inherent filamentary randomness is a severe problem that is yet to be solved. Here, we propose a specially treated hafnium oxide (HfO x :N)-based ECM threshold switch with high reliability, low-voltage operation (0.2 V), high ON/OFF ratio (5 × 10 8 ), great endurance (10 6 ), and fast switching speed (1.5 μs at 2 V). The nitrogen ions in the HfO x :N layer assist confining the path of the metallic filament, which significantly suppresses filament randomness as well as reduces power consumption and alternating current response time. The feasibility of ECM threshold switches to logic applications, AND and OR, is first introduced. The ECM threshold switch has great potential to be utilized in complementary logic circuits because of its ultralow operation power consumption, high integrability using an array structure (4F 2 ), and fast switching characteristics. Furthermore, we have successfully verified its applicability to flexible electronics on polyethylene naphthalate films that can retain stable operation under considerable mechanical stress. We believe that this research paves the way to fabricate highly reliable ECM threshold switches for flexible complementary logic circuits with ultralow power consumption.
KW - electrochemical metallization (ECM) threshold switch
KW - filament confinement technique
KW - flexible logic circuit
KW - nitrogen doping
KW - volatile switching
UR - http://www.scopus.com/inward/record.url?scp=85062587457&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062587457&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b18970
DO - 10.1021/acsami.8b18970
M3 - Article
C2 - 30761894
AN - SCOPUS:85062587457
VL - 11
SP - 9182
EP - 9189
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 9
ER -