Nitrogen-polar GaN growth evolution on c-plane sapphire

Q. Sun, Y. S. Cho, I. H. Lee, J. Han, B. H. Kong, H. K. Cho

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This letter presents a study on N-polar GaN growth evolution on sapphire using a low-temperature GaN buffer, which is distinctly different from the two-step growth of Ga-polar GaN according to both in situ reflectance and ex situ microscopy. Annealed N-polar GaN buffer exhibits densely packed tiny grains, serving as a template for the subsequent high-temperature GaN growth, which starts in a quasi-two-dimensional mode without any roughening-recovery process. Atomically smooth N-polar GaN has been achieved with no stacking fault or inversion domain observed. The mosaic microstructure, electrical, and optical properties of N-polar GaN are compared with those of Ga-polar GaN.

Original languageEnglish
Article number131912
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Sun, Q., Cho, Y. S., Lee, I. H., Han, J., Kong, B. H., & Cho, H. K. (2008). Nitrogen-polar GaN growth evolution on c-plane sapphire. Applied Physics Letters, 93(13), [131912].