Nitrogen-polar GaN growth evolution on c-plane sapphire

Q. Sun, Y. S. Cho, In-Hwan Lee, J. Han, B. H. Kong, H. K. Cho

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

This letter presents a study on N-polar GaN growth evolution on sapphire using a low-temperature GaN buffer, which is distinctly different from the two-step growth of Ga-polar GaN according to both in situ reflectance and ex situ microscopy. Annealed N-polar GaN buffer exhibits densely packed tiny grains, serving as a template for the subsequent high-temperature GaN growth, which starts in a quasi-two-dimensional mode without any roughening-recovery process. Atomically smooth N-polar GaN has been achieved with no stacking fault or inversion domain observed. The mosaic microstructure, electrical, and optical properties of N-polar GaN are compared with those of Ga-polar GaN.

Original languageEnglish
Article number131912
JournalApplied Physics Letters
Volume93
Issue number13
DOIs
Publication statusPublished - 2008 Oct 13
Externally publishedYes

Fingerprint

sapphire
nitrogen
buffers
crystal defects
templates
recovery
electrical properties
inversions
microscopy
reflectance
optical properties
microstructure

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sun, Q., Cho, Y. S., Lee, I-H., Han, J., Kong, B. H., & Cho, H. K. (2008). Nitrogen-polar GaN growth evolution on c-plane sapphire. Applied Physics Letters, 93(13), [131912]. https://doi.org/10.1063/1.2993333

Nitrogen-polar GaN growth evolution on c-plane sapphire. / Sun, Q.; Cho, Y. S.; Lee, In-Hwan; Han, J.; Kong, B. H.; Cho, H. K.

In: Applied Physics Letters, Vol. 93, No. 13, 131912, 13.10.2008.

Research output: Contribution to journalArticle

Sun, Q, Cho, YS, Lee, I-H, Han, J, Kong, BH & Cho, HK 2008, 'Nitrogen-polar GaN growth evolution on c-plane sapphire', Applied Physics Letters, vol. 93, no. 13, 131912. https://doi.org/10.1063/1.2993333
Sun, Q. ; Cho, Y. S. ; Lee, In-Hwan ; Han, J. ; Kong, B. H. ; Cho, H. K. / Nitrogen-polar GaN growth evolution on c-plane sapphire. In: Applied Physics Letters. 2008 ; Vol. 93, No. 13.
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