@article{796dab839c25459b90e2579c24eb5ff5,
title = "Noise figure formulas of RF MOSFETs in the presence of digital substrate noise",
abstract = "Noise figure (NF) formulas are presented for RF MOSFETs in the presence of digital substrate noise. When the digital substrate noise is much higher than the intrinsic MOSFET noise, simplified NF formulas can be obtained. For the case of which the digital substrate noise is comparable to the MOSFET thermal noise in magnitude, general NF expressions of RF MOSFETs with digital substrate noise are derived. Comparisons of the derived NF formulas and the experimental results are done showing good agreement between them for RF MOSFETs with digital substrate noise.",
keywords = "Digital substrate noise, RF MOSFET, noise figure (NF), substrate noise, thermal noise",
author = "Park, {Chan Hyeong} and Yongho Oh and Rieh, {Jae Sung}",
note = "Funding Information: Manuscript received June 24, 2010; accepted August 04, 2010. Date of publication September 23, 2010; date of current version November 05, 2010. This work was supported by a research grant of Kwangwoon University in 2009 and by the NRF Grant funded by the Korea government (MEST) (2009-0086266). C. H. Park is with the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701, Korea (e-mail: chan-park@kw.ac.kr). Y. Oh and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: jsrieh@korea.ac.kr). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2010.2068041 Fig. 1. Small-signal equivalent circuit of an RF MOSFET under digital substrate noise [6].",
year = "2010",
month = nov,
doi = "10.1109/LMWC.2010.2068041",
language = "English",
volume = "20",
pages = "622--624",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}