Noise properties of a single ZnO nanowire device

Soo Han Choi, Dong Wook Kim, Do Young Jang, Hyun Jin Ji, Sang Woo Kim, So Jung Park, Seung Eon Moon, Gyu-Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The low frequency noise of individual ZnO nanowire (NW) field effect transistors (FETs) exposed to air is systematically characterized. The measured noise power spectrum shows a classical 1/f type. The noise amplitude is independent of source-drain current and inversely proportional to gate voltage. The extracted Hooge's constant of ZnO NW is found to be 6.52×10 -3. In addition, the low frequency noise of ZnO NW according to NW resistance and contact property are investigated. The noise amplitude is proportional to the square of ZnO NW resistance. If a sample shows a nonlinear current-voltage (I-V) characteristic due to a poor electrical contact, the noise power spectrum is proportional to the third power of current instead of the square of current.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages26-32
Number of pages7
Volume1080
Publication statusPublished - 2008 Dec 1
EventSemiconductor Nanowires-Growth, Physics, Devices and Applications - San Francisco, CA, United States
Duration: 2008 Mar 242008 Mar 28

Other

OtherSemiconductor Nanowires-Growth, Physics, Devices and Applications
CountryUnited States
CitySan Francisco, CA
Period08/3/2408/3/28

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Choi, S. H., Kim, D. W., Jang, D. Y., Ji, H. J., Kim, S. W., Park, S. J., Moon, S. E., & Kim, G-T. (2008). Noise properties of a single ZnO nanowire device. In Materials Research Society Symposium Proceedings (Vol. 1080, pp. 26-32)