Non-alloyed ohmic contacts on GaAs using metal-interlayer-semiconductor structure with SF6 plasma treatment

Seung Hwan Kim, Gwang Sik Kim, Sun Woo Kim, Jeong Kyu Kim, Changhwan Choi, Jin Hong Park, Rino Choi, Hyun-Yong Yu

Research output: Contribution to journalArticle

11 Citations (Scopus)


We demonstrate the effect of SF6 plasma passivation with a ZnO interlayer in a metal-interlayersemiconductor (MIS) structure to reduce source/drain (S/D) contact resistance. The interface trap states and the metalinduced gap states causing the Fermi-level pinning problem are effectively alleviated by passivating the GaAs surface with SF6 plasma treatment and inserting a thin ZnO interlayer, respectively. Specific contact resistivity exhibits ∼104× reduction when the GaAs surface is treated with SF6 plasma, followed by ZnO interlayer deposition, compared with the Ti/n-GaAs (∼2×1018 cm-3) S/D contact. This result proposes the promising non-alloyed S/D ohmic contact for III-V semiconductor-based transistors.

Original languageEnglish
Article number2524470
Pages (from-to)373-376
Number of pages4
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2016 Apr 1



  • Contact resistance
  • Fermi-level unpinning
  • Gallium arsenide
  • Passivation
  • SF6 plasma

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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