Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

G. T. Kim; S. H. Jhang; J. G. Park; Y. W. Park; S. Roth

doi:10.1016/S0379-6779(00)00551-8

Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

G. T. Kim, S. H. Jhang, J. G. Park, Y. W. Park, S. Roth

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Synthetic Metals
Volume	117
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00551-8
Publication status	Published - 2001 Feb 15
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/S0379-6779(00)00551-8

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title = "Non-ohmic current-voltage characteristics in single-wall carbon nanotube network",

abstract = "The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.",

author = "Kim, {G. T.} and Jhang, {S. H.} and Park, {J. G.} and Park, {Y. W.} and S. Roth",

note = "Funding Information: We thank people at MPI, Stuttgart for valuable discussions. This work was supported by KISTEP under the contract no. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. Partial supports for G.T.K. were done by the KOSEF research training fellowship program in Germany.",

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AU - Kim, G. T.

AU - Jhang, S. H.

AU - Park, J. G.

AU - Park, Y. W.

AU - Roth, S.

N1 - Funding Information: We thank people at MPI, Stuttgart for valuable discussions. This work was supported by KISTEP under the contract no. 98-I-01-04-A-026, Ministry of Science and Technology (MOST), Korea. Partial supports for G.T.K. were done by the KOSEF research training fellowship program in Germany.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

AB - The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

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JF - Synthetic Metals

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ER -

Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

Abstract

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