Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

Gyu-Tae Kim; S. H. Jhang; J. G. Park; Y. W. Park; S. Roth

doi:10.1016/S0379-6779(00)00551-8

Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

Gyu-Tae Kim, S. H. Jhang, J. G. Park, Y. W. Park, S. Roth

Research output: Contribution to journal › Article

43 Citations (Scopus)

Abstract

The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Synthetic Metals
Volume	117
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00551-8
Publication status	Published - 2001 Feb 15
Externally published	Yes

Fingerprint

Carbon Nanotubes

Current voltage characteristics

Carbon nanotubes

carbon nanotubes

electrical resistivity

Energy barriers

electric potential

low currents

Electric fields

tubes

Temperature

temperature dependence

electric fields

Electric potential

curves

energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Polymers and Plastics

Cite this

Kim, G-T., Jhang, S. H., Park, J. G., Park, Y. W., & Roth, S. (2001). Non-ohmic current-voltage characteristics in single-wall carbon nanotube network. Synthetic Metals, 117(1-3), 123-126. https://doi.org/10.1016/S0379-6779(00)00551-8

Non-ohmic current-voltage characteristics in single-wall carbon nanotube network. / Kim, Gyu-Tae; Jhang, S. H.; Park, J. G.; Park, Y. W.; Roth, S.

In: Synthetic Metals, Vol. 117, No. 1-3, 15.02.2001, p. 123-126.

Research output: Contribution to journal › Article

Kim, G-T, Jhang, SH, Park, JG, Park, YW & Roth, S 2001, 'Non-ohmic current-voltage characteristics in single-wall carbon nanotube network', Synthetic Metals, vol. 117, no. 1-3, pp. 123-126. https://doi.org/10.1016/S0379-6779(00)00551-8

Kim G-T, Jhang SH, Park JG, Park YW, Roth S. Non-ohmic current-voltage characteristics in single-wall carbon nanotube network. Synthetic Metals. 2001 Feb 15;117(1-3):123-126. https://doi.org/10.1016/S0379-6779(00)00551-8

Kim, Gyu-Tae ; Jhang, S. H. ; Park, J. G. ; Park, Y. W. ; Roth, S. / Non-ohmic current-voltage characteristics in single-wall carbon nanotube network. In: Synthetic Metals. 2001 ; Vol. 117, No. 1-3. pp. 123-126.

@article{b3147eb29a31437ba72a2ced286c77ca,

title = "Non-ohmic current-voltage characteristics in single-wall carbon nanotube network",

abstract = "The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.",

author = "Gyu-Tae Kim and Jhang, {S. H.} and Park, {J. G.} and Park, {Y. W.} and S. Roth",

year = "2001",

month = "2",

day = "15",

doi = "10.1016/S0379-6779(00)00551-8",

language = "English",

volume = "117",

pages = "123--126",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "1-3",

}

TY - JOUR

T1 - Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

AU - Kim, Gyu-Tae

AU - Jhang, S. H.

AU - Park, J. G.

AU - Park, Y. W.

AU - Roth, S.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

AB - The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

UR - http://www.scopus.com/inward/record.url?scp=0035246946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035246946&partnerID=8YFLogxK

U2 - 10.1016/S0379-6779(00)00551-8

DO - 10.1016/S0379-6779(00)00551-8

M3 - Article

AN - SCOPUS:0035246946

VL - 117

SP - 123

EP - 126

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -

Access to Document

10.1016/S0379-6779(00)00551-8