Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

Gyu-Tae Kim; S. H. Jhang; J. G. Park; Y. W. Park; S. Roth

doi:10.1016/S0379-6779(00)00551-8

Non-ohmic current-voltage characteristics in single-wall carbon nanotube network

Gyu-Tae Kim, S. H. Jhang, J. G. Park, Y. W. Park, S. Roth

Research output: Contribution to journal › Article

43 Citations (Scopus)

Abstract

The non-ohmic current-voltage (I-V) characteristics of the single-wall carbon nanotube network were investigated at low temperatures. The temperature dependence of resistivity at low current (I<10 μA) shows non-metallic negative dρ/dT from T = 1.4-300 K. Below T<15 K, gradual decreases of resistivity are observed as the applied currents increase, showing significant non-ohmic behavior at high electric field. The I-V curves in the non-ohmic regime can be fitted well by the fluctuation-induced tunneling model, indicating the importance of inter-tubular contacts or inherent energy barriers inside the tubes.

Original language	English
Pages (from-to)	123-126
Number of pages	4
Journal	Synthetic Metals
Volume	117
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(00)00551-8
Publication status	Published - 2001 Feb 15
Externally published	Yes

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Materials Chemistry
Polymers and Plastics

Cite this

Kim, G-T., Jhang, S. H., Park, J. G., Park, Y. W., & Roth, S. (2001). Non-ohmic current-voltage characteristics in single-wall carbon nanotube network. Synthetic Metals, 117(1-3), 123-126. https://doi.org/10.1016/S0379-6779(00)00551-8

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10.1016/S0379-6779(00)00551-8