Non-volatile control of 2DEG conductivity at oxide interfaces

Shin Ik Kim, Dai Hong Kim, Yoonjung Kim, Seon Young Moon, Min Gyu Kang, Jong Kwon Choi, Ho Won Jang, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Hye Jung Chang, Chong Yun Kang, Suyoun Lee, Seong Hyeon Hong, Jin Sang Kim, Seung Hyub Baek

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti 0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO 3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

Original languageEnglish
Pages (from-to)4612-4617
Number of pages6
JournalAdvanced Materials
Volume25
Issue number33
DOIs
Publication statusPublished - 2013 Sep 6

Keywords

  • epitaxial oxide thin films
  • ferroelectric
  • multifunctional oxide
  • two-dimentional electron gas

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Non-volatile control of 2DEG conductivity at oxide interfaces'. Together they form a unique fingerprint.

  • Cite this

    Kim, S. I., Kim, D. H., Kim, Y., Moon, S. Y., Kang, M. G., Choi, J. K., Jang, H. W., Kim, S. K., Choi, J. W., Yoon, S. J., Chang, H. J., Kang, C. Y., Lee, S., Hong, S. H., Kim, J. S., & Baek, S. H. (2013). Non-volatile control of 2DEG conductivity at oxide interfaces. Advanced Materials, 25(33), 4612-4617. https://doi.org/10.1002/adma.201301097