Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer

Sangyeop Lee, Kyung Jae Lee, Seonghoon Choi, Seul Ki Bac, Jihoon Chang, Suho Choi, Phunvira Chongthanaphisut, Sang Hoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticle

Abstract

The magnetotransport properties of a GaMnAs trilayer in which two GaMnAs layers are separated by a nonmagnetic GaAs:Be spacer has been investigated during the magnetization reversal process. Interestingly, the planar Hall resistance (PHR) reveals that the two GaMnAs layers in a trilayer structure have opposite signs of anisotropic magnetoresistance (AMR). The magnetoresistance is observed to be significantly different for the collinear and noncollinear magnetic alignment, which indicates that the presence of the giant magnetoresistance (GMR)-like effect in the system. This GMR-like effect was systematically investigated during the process of magnetization reversal using field and angle scans of MR measurements.

Original languageEnglish
Pages (from-to)176-180
Number of pages5
JournalJournal of Crystal Growth
Volume512
DOIs
Publication statusPublished - 2019 Apr 15

    Fingerprint

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • A3. Multilayer
  • B2. Semiconducting III-V materials (Ferromagnetic semiconductors, Giant magnetoresistance, Noncollinear alignments, Planar Hall effect, Magnetic memory)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Lee, S., Lee, K. J., Choi, S., Bac, S. K., Chang, J., Choi, S., Chongthanaphisut, P., Lee, S. H., Liu, X., Dobrowolska, M., & Furdyna, J. K. (2019). Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer. Journal of Crystal Growth, 512, 176-180. https://doi.org/10.1016/j.jcrysgro.2019.02.032