TY - JOUR
T1 - Noncollinear magnetoresistance of trilayers consisting of two ferromagnetic GaMnAs layers and a nonmagnetic GaAs:Be spacer
AU - Lee, Sangyeop
AU - Lee, Kyung Jae
AU - Choi, Seonghoon
AU - Bac, Seul Ki
AU - Chang, Jihoon
AU - Choi, Suho
AU - Chongthanaphisut, Phunvira
AU - Lee, Sanghoon
AU - Liu, Xinyu
AU - Dobrowolska, M.
AU - Furdyna, Jacek K.
N1 - Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education ( 2018R1D1A1A02042965 ); by Ministry of Science ICT ( 2018R1A4A1024157 ); by a Korea University Future Research Grant ; and by the National Science Foundation Grant DMR 1400432 .
Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2018R1D1A1A02042965); by Ministry of Science ICT (2018R1A4A1024157); by a Korea University Future Research Grant; and by the National Science Foundation Grant DMR 1400432.
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/4/15
Y1 - 2019/4/15
N2 - The magnetotransport properties of a GaMnAs trilayer in which two GaMnAs layers are separated by a nonmagnetic GaAs:Be spacer has been investigated during the magnetization reversal process. Interestingly, the planar Hall resistance (PHR) reveals that the two GaMnAs layers in a trilayer structure have opposite signs of anisotropic magnetoresistance (AMR). The magnetoresistance is observed to be significantly different for the collinear and noncollinear magnetic alignment, which indicates that the presence of the giant magnetoresistance (GMR)-like effect in the system. This GMR-like effect was systematically investigated during the process of magnetization reversal using field and angle scans of MR measurements.
AB - The magnetotransport properties of a GaMnAs trilayer in which two GaMnAs layers are separated by a nonmagnetic GaAs:Be spacer has been investigated during the magnetization reversal process. Interestingly, the planar Hall resistance (PHR) reveals that the two GaMnAs layers in a trilayer structure have opposite signs of anisotropic magnetoresistance (AMR). The magnetoresistance is observed to be significantly different for the collinear and noncollinear magnetic alignment, which indicates that the presence of the giant magnetoresistance (GMR)-like effect in the system. This GMR-like effect was systematically investigated during the process of magnetization reversal using field and angle scans of MR measurements.
KW - A1. Characterization
KW - A3. Molecular beam epitaxy
KW - A3. Multilayer
KW - B2. Semiconducting III-V materials (Ferromagnetic semiconductors, Giant magnetoresistance, Noncollinear alignments, Planar Hall effect, Magnetic memory)
UR - http://www.scopus.com/inward/record.url?scp=85061634555&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2019.02.032
DO - 10.1016/j.jcrysgro.2019.02.032
M3 - Article
AN - SCOPUS:85061634555
SN - 0022-0248
VL - 512
SP - 176
EP - 180
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -