Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS2) by zinc oxide (ZnO)

Dong Ho Kang, Seong Taek Hong, Aely Oh, Seung Hwan Kim, Hyun-Yong Yu, Jin Hong Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS2 by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (ID-VG with/without exposure to 520, 655, 785, and 850nm laser sources). The ZnO doping improved the performance parameters of MoS2-based electronics (Ion↑, μFE↑, n↑) owing to reduction of the effective barrier height between the source and the MoS2 channel. We also monitored the effects of ZnO doping during exposure to air; reduction in δVTH of about 75% was observed after 156h. In addition, the optoelectronic performance of the MoS2 photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18×103 A/W) and detectivity (5.94×1012 Jones) of the ZnO-doped photodetector were observed for 520nm laser exposure.

Original languageEnglish
JournalMaterials Research Bulletin
DOIs
Publication statusAccepted/In press - 2015 Sep 2

Keywords

  • A. Electronic materials
  • A. Layered compounds
  • A. Semiconductor
  • D. Electrical properties
  • D. Electronic structure

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Fingerprint Dive into the research topics of 'Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS<sub>2</sub>) by zinc oxide (ZnO)'. Together they form a unique fingerprint.

  • Cite this