Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors

Doohyeok Lim; Minsuk Kim; Yoonjoong Kim; Jinsun Cho; Sangsig Kim

doi:10.1109/TED.2018.2802492

Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors

Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n⁺-p-n⁺ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.

Original language	English
Pages (from-to)	1578-1582
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	4
DOIs	https://doi.org/10.1109/TED.2018.2802492
Publication status	Published - 2018 Apr 1

Keywords

Bistable resistor (biristor)
capacitor-less
one-transistor dynamic random access memory (1T-DRAM)
positive feedback
silicon nanowire (SiNW)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2018.2802492

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Lim, D., Kim, M., Kim, Y., Cho, J., & Kim, S. (2018). Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors. IEEE Transactions on Electron Devices, 65(4), 1578-1582. https://doi.org/10.1109/TED.2018.2802492

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