TY - JOUR
T1 - Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors
AU - Lim, Doohyeok
AU - Kim, Minsuk
AU - Kim, Yoonjoong
AU - Cho, Jinsun
AU - Kim, Sangsig
N1 - Funding Information:
Manuscript received December 18, 2017; revised January 24, 2018; accepted January 29, 2018. Date of publication March 1, 2018; date of current version March 22, 2018. This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Global Ph.D. Fellowship Program through NRF funded by the Ministry of Education under Grant NRF-2014H1A2A1021475, in part by the Brain Korea 21 Plus Project in 2017, in part by Samsung Electronics, and in part by the Ministry of Trade, Industry and Energy (MOTIE, South Korea) through the Industrial Strategic Technology Development Program under Grant 10067791 (“Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence”). The review of this paper was arranged by Editor J. Kang. (Corresponding author: Sangsig Kim.) The authors are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: sangsig@korea.ac.kr).
PY - 2018/4
Y1 - 2018/4
N2 - In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.
AB - In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.
KW - Bistable resistor (biristor)
KW - capacitor-less
KW - one-transistor dynamic random access memory (1T-DRAM)
KW - positive feedback
KW - silicon nanowire (SiNW)
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U2 - 10.1109/TED.2018.2802492
DO - 10.1109/TED.2018.2802492
M3 - Article
AN - SCOPUS:85042860783
VL - 65
SP - 1578
EP - 1582
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
ER -