Abstract
In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.
| Original language | English |
|---|---|
| Pages (from-to) | 1578-1582 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 65 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2018 Apr 1 |
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Keywords
- Bistable resistor (biristor)
- capacitor-less
- one-transistor dynamic random access memory (1T-DRAM)
- positive feedback
- silicon nanowire (SiNW)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors. / Lim, Doohyeok; Kim, Minsuk; Kim, Yoonjoong; Cho, Jinsun; Kim, Sangsig.
In: IEEE Transactions on Electron Devices, Vol. 65, No. 4, 01.04.2018, p. 1578-1582.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors
AU - Lim, Doohyeok
AU - Kim, Minsuk
AU - Kim, Yoonjoong
AU - Cho, Jinsun
AU - Kim, Sangsig
PY - 2018/4/1
Y1 - 2018/4/1
N2 - In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.
AB - In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.
KW - Bistable resistor (biristor)
KW - capacitor-less
KW - one-transistor dynamic random access memory (1T-DRAM)
KW - positive feedback
KW - silicon nanowire (SiNW)
UR - http://www.scopus.com/inward/record.url?scp=85042860783&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85042860783&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2802492
DO - 10.1109/TED.2018.2802492
M3 - Article
AN - SCOPUS:85042860783
VL - 65
SP - 1578
EP - 1582
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
ER -