In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.
- Bistable resistor (biristor)
- one-transistor dynamic random access memory (1T-DRAM)
- positive feedback
- silicon nanowire (SiNW)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering