Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors

Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, Sangsig Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.

Original languageEnglish
Pages (from-to)1578-1582
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume65
Issue number4
DOIs
Publication statusPublished - 2018 Apr 1

Fingerprint

Silicon
Nanowires
Data storage equipment
Resistors
Feedback
Impact ionization
Metals
Substrates
Temperature

Keywords

  • Bistable resistor (biristor)
  • capacitor-less
  • one-transistor dynamic random access memory (1T-DRAM)
  • positive feedback
  • silicon nanowire (SiNW)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors. / Lim, Doohyeok; Kim, Minsuk; Kim, Yoonjoong; Cho, Jinsun; Kim, Sangsig.

In: IEEE Transactions on Electron Devices, Vol. 65, No. 4, 01.04.2018, p. 1578-1582.

Research output: Contribution to journalArticle

Lim, Doohyeok ; Kim, Minsuk ; Kim, Yoonjoong ; Cho, Jinsun ; Kim, Sangsig. / Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors. In: IEEE Transactions on Electron Devices. 2018 ; Vol. 65, No. 4. pp. 1578-1582.
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