Nondestructive Readout Memory Characteristics of Silicon Nanowire Biristors

Doohyeok Lim, Minsuk Kim, Yoonjoong Kim, Jinsun Cho, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this paper, we demonstrate nondestructive readout memory characteristics of a bistable resistor (biristor) with an n+-p-n+ Si nanowire (SiNW) channel on a bendable substrate. The SiNW channel is fabricated using a top-down route, which is compatible with the current complementary metal-oxide-semiconductor technology. The SiNW biristor shows the outstanding memory characteristics such as a retention time of 10 s and a current sensing margin of 23-μA at room temperature. These memory characteristics originate from a positive feedback process resulting from impact ionization near the p-n junction. Moreover, the positive feedback mechanism is comprehensively investigated using device simulation.

Original languageEnglish
Pages (from-to)1578-1582
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume65
Issue number4
DOIs
Publication statusPublished - 2018 Apr 1

Keywords

  • Bistable resistor (biristor)
  • capacitor-less
  • one-transistor dynamic random access memory (1T-DRAM)
  • positive feedback
  • silicon nanowire (SiNW)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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