Nonlocal voltage in a spin field effect transistor with finite channel width

Jonghwa Eom; Hyun Cheol Koo; Joonyeon Chang; Suk Hee Han

doi:10.1016/j.cap.2010.07.019

Nonlocal voltage in a spin field effect transistor with finite channel width

Jonghwa Eom, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

Original language	English
Pages (from-to)	276-279
Number of pages	4
Journal	Current Applied Physics
Volume	11
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2010.07.019
Publication status	Published - 2011 May
Externally published	Yes

Keywords

Rashba spin splitting
Spin field effect transistor
Spin-orbit interaction

ASJC Scopus subject areas

Materials Science(all)
Physics and Astronomy(all)

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10.1016/j.cap.2010.07.019

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title = "Nonlocal voltage in a spin field effect transistor with finite channel width",

abstract = "Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.",

keywords = "Rashba spin splitting, Spin field effect transistor, Spin-orbit interaction",

author = "Jonghwa Eom and Koo, {Hyun Cheol} and Joonyeon Chang and Han, {Suk Hee}",

note = "Funding Information: This work was supported by the faculty research fund of Sejong University in 2008 and National Research Foundation of Korea Grant funded by the Korean Government (2010-0010861). ",

year = "2011",

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doi = "10.1016/j.cap.2010.07.019",

language = "English",

volume = "11",

pages = "276--279",

journal = "Current Applied Physics",

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TY - JOUR

T1 - Nonlocal voltage in a spin field effect transistor with finite channel width

AU - Eom, Jonghwa

AU - Koo, Hyun Cheol

AU - Chang, Joonyeon

AU - Han, Suk Hee

N1 - Funding Information: This work was supported by the faculty research fund of Sejong University in 2008 and National Research Foundation of Korea Grant funded by the Korean Government (2010-0010861).

PY - 2011/5

Y1 - 2011/5

N2 - Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

AB - Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

KW - Rashba spin splitting

KW - Spin field effect transistor

KW - Spin-orbit interaction

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U2 - 10.1016/j.cap.2010.07.019

DO - 10.1016/j.cap.2010.07.019

M3 - Article

AN - SCOPUS:79951682755

SN - 1567-1739

VL - 11

SP - 276

EP - 279

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Nonlocal voltage in a spin field effect transistor with finite channel width

Abstract

Keywords

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