Nonlocal voltage in a spin field effect transistor with finite channel width

Jonghwa Eom, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

Original languageEnglish
Pages (from-to)276-279
Number of pages4
JournalCurrent Applied Physics
Volume11
Issue number3
DOIs
Publication statusPublished - 2011 May 1
Externally publishedYes

Fingerprint

Field effect transistors
spin-orbit interactions
Orbits
field effect transistors
Electric potential
electric potential
electron trajectories
Two dimensional electron gas
Ballistics
injectors
mean free path
ballistics
electron gas
Trajectories
Scattering
Impurities
Detectors
impurities
oscillations
Electrons

Keywords

  • Rashba spin splitting
  • Spin field effect transistor
  • Spin-orbit interaction

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Nonlocal voltage in a spin field effect transistor with finite channel width. / Eom, Jonghwa; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee.

In: Current Applied Physics, Vol. 11, No. 3, 01.05.2011, p. 276-279.

Research output: Contribution to journalArticle

Eom, Jonghwa ; Koo, Hyun Cheol ; Chang, Joonyeon ; Han, Suk Hee. / Nonlocal voltage in a spin field effect transistor with finite channel width. In: Current Applied Physics. 2011 ; Vol. 11, No. 3. pp. 276-279.
@article{1dd77d60775641bb9cc5fb03cc20ecce,
title = "Nonlocal voltage in a spin field effect transistor with finite channel width",
abstract = "Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.",
keywords = "Rashba spin splitting, Spin field effect transistor, Spin-orbit interaction",
author = "Jonghwa Eom and Koo, {Hyun Cheol} and Joonyeon Chang and Han, {Suk Hee}",
year = "2011",
month = "5",
day = "1",
doi = "10.1016/j.cap.2010.07.019",
language = "English",
volume = "11",
pages = "276--279",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "3",

}

TY - JOUR

T1 - Nonlocal voltage in a spin field effect transistor with finite channel width

AU - Eom, Jonghwa

AU - Koo, Hyun Cheol

AU - Chang, Joonyeon

AU - Han, Suk Hee

PY - 2011/5/1

Y1 - 2011/5/1

N2 - Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

AB - Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

KW - Rashba spin splitting

KW - Spin field effect transistor

KW - Spin-orbit interaction

UR - http://www.scopus.com/inward/record.url?scp=79951682755&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951682755&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2010.07.019

DO - 10.1016/j.cap.2010.07.019

M3 - Article

AN - SCOPUS:79951682755

VL - 11

SP - 276

EP - 279

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 3

ER -