Nonlocal voltage in a spin field effect transistor with finite channel width

Jonghwa Eom, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Spin transport in the two-dimensional electron gas with strong spin-orbit interaction is examined by using a simple phenomenological simulation. The large spin-orbit interaction and the randomized electron trajectory due to the impurity scattering make the nonlocal voltage of a spin field effect transistor undetectable in the diffusive regime. However, the spin-precessional phase accumulates coherently in the ballistic regime and the nonlocal voltage is given by a function of spin-orbit interaction parameter. If the distance between injector and detector is comparable to the mean free path, a sinusoidal oscillation of nonlocal voltage is restored even for a wide channel.

Original languageEnglish
Pages (from-to)276-279
Number of pages4
JournalCurrent Applied Physics
Issue number3
Publication statusPublished - 2011 May
Externally publishedYes


  • Rashba spin splitting
  • Spin field effect transistor
  • Spin-orbit interaction

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Nonlocal voltage in a spin field effect transistor with finite channel width'. Together they form a unique fingerprint.

Cite this