Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2 ̄ 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)