Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN

Kwang Hyeon Baik, Hyonwoong Kim, Jihyun Kim, Sukkoo Jung, Soohwan Jang

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Nonpolar n-ZnO/p-GaN heterojunction light emitting diode has been demonstrated with a-plane (11 2 ̄ 0) ZnO active layer grown by a facile low-cost solution growth method at low temperature of 90 °C. High quality nonpolar ZnO planar film without seed layer was directly formed on a-plane GaN template due to the anisotropic growth rates along the specific crystallographic directions. The turn on voltage of the device was as low as 3 V, and narrow stable UV-blue electroluminescence emissions with peak wavelength of 392 to 420 nm under various forward bias conditions at room temperature were observed.

Original languageEnglish
Article number091107
JournalApplied Physics Letters
Volume103
Issue number9
DOIs
Publication statusPublished - 2013 Aug 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Nonpolar light emitting diode with sharp near-ultraviolet emissions using hydrothermally grown ZnO on p-GaN'. Together they form a unique fingerprint.

  • Cite this