Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer

Hyungu Kang, Jinsun Cho, Yoonjoong Kim, Doohyeok Lim, Sola Woo, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We demonstrate the nonvolatile and volatile memory characteristics of a gate-all-around silicon nanowire feedback field-effect transistor (FBFET) with a nitride charge-storage layer analyzed by a commercial TCAD simulator. Our FBFET exhibits a threshold voltage window of 0.76 V with a programming/erasing time of 1 μs in the nonvolatile memory mode. We investigated the delay of read operations with accumulated charges in the intrinsic channel region in this memory mode. Moreover, the FBFET exhibits a sensing margin of 6.3 μA and a read/write speed of 10 ns with an outstanding retention time, as well as nondestructive read characteristics in the volatile memory mode, allowing this device to operate without any refresh operation. In addition, we describe the operating principle of our device and demonstrate its potential as integrated memory for 3-D integrations.

Original languageEnglish
Article number8756223
Pages (from-to)3342-3348
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number8
DOIs
Publication statusPublished - 2019 Aug 1

Keywords

  • Feedback field-effect transistor (FBFET)
  • integration
  • nonvolatile memory
  • positive feedback loop
  • volatile memory

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Nonvolatile and Volatile Memory Characteristics of a Silicon Nanowire Feedback Field-Effect Transistor with a Nitride Charge-Storage Layer'. Together they form a unique fingerprint.

  • Cite this