Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure

S. M. Koo, M. S. Lee, Byung-Moo Moon

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Abstract

A nonvolatile current sensing device using Pb(Zr0.52,Ti 0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

Original languageEnglish
Pages (from-to)1088-1089
Number of pages2
JournalElectronics Letters
Volume40
Issue number17
DOIs
Publication statusPublished - 2004 Aug 19

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Sheet resistance
Ferroelectric materials
Polarization
Data storage equipment
Thin films
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O 3/BaRuO3 structure. / Koo, S. M.; Lee, M. S.; Moon, Byung-Moo.

In: Electronics Letters, Vol. 40, No. 17, 19.08.2004, p. 1088-1089.

Research output: Contribution to journalArticle

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