Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films

Hyunhee Baek, Chanwoo Lee, Jungkyu Choi, Jinhan Cho

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report on the resistive switching nonvolatile memory (RSNM) properties of niobium pentoxide (Nb2O5) films prepared using sol-gel chemistry. A sol-gel derived solution of niobium ethoxide, a precursor to Nb2O5, was spin-coated on to a platinum (Pt)-coated silicon substrate, and was then annealed at approximately 620 and 450 C to form a Nb2O5 film of polycrystalline and amorphous structure, respectively. A top electrode consisting of Ag, W, Au, or Pt was then coated onto the Nb2O5 films to complete the fabrication. After a forming process of limited current compliance up to 10 mA, known as "electroforming", a resistive switching phenomenon, independent of voltage polarity (unipolar switching), was observed at low operating voltages (0.59 ± 0.05 VRESET and 1.03 ± 0.06 VSET) with a high ON/OFF current ratio above 108. The reported approach offers opportunities for preparing Nb2O5-based resistive switching memory devices from solution process.

Original languageEnglish
Pages (from-to)380-386
Number of pages7
JournalLangmuir
Volume29
Issue number1
DOIs
Publication statusPublished - 2013 Jan 8

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Polymethyl Methacrylate
Platinum
Niobium
niobium
Sol-gels
Gels
gels
Data storage equipment
Equipment and Supplies
Silicon
Compliance
Electrodes
platinum
Electroforming
electroforming
Electric potential
electric potential
polarity
chemistry
Fabrication

ASJC Scopus subject areas

  • Electrochemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Materials Science(all)
  • Spectroscopy

Cite this

Nonvolatile memory devices prepared from sol-gel derived niobium pentoxide films. / Baek, Hyunhee; Lee, Chanwoo; Choi, Jungkyu; Cho, Jinhan.

In: Langmuir, Vol. 29, No. 1, 08.01.2013, p. 380-386.

Research output: Contribution to journalArticle

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