Nonvolatile memory properties of Pt nanoparticle-embedded TiO2 nanocomposite multilayers via electrostatic layer-by-layer assembly

Chanwoo Lee, Inpyo Kim, Hyunjung Shin, Sanghyo Kim, Jinhan Cho

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (PtNP) with about 5.8nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to PtNP-embedded TiO2 films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10 4) and the stable device performance. These phenomena were caused by the presence of PtNP inserted within TMO films.

Original languageEnglish
Article number185704
JournalNanotechnology
Volume21
Issue number18
DOIs
Publication statusPublished - 2010 Apr 21
Externally publishedYes

Fingerprint

Nanocomposites
Static Electricity
Nanoparticles
Electrostatics
Multilayers
Data storage equipment
Metal Nanoparticles
Equipment and Supplies
Metal nanoparticles
Electric potential
Oxides
Transition metals
Electrodes
Titanium
Hot Temperature
Metals
Annealing
Substrates

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Nonvolatile memory properties of Pt nanoparticle-embedded TiO2 nanocomposite multilayers via electrostatic layer-by-layer assembly. / Lee, Chanwoo; Kim, Inpyo; Shin, Hyunjung; Kim, Sanghyo; Cho, Jinhan.

In: Nanotechnology, Vol. 21, No. 18, 185704, 21.04.2010.

Research output: Contribution to journalArticle

@article{5f9163a8dd8948b79d36a974118c2943,
title = "Nonvolatile memory properties of Pt nanoparticle-embedded TiO2 nanocomposite multilayers via electrostatic layer-by-layer assembly",
abstract = "It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (PtNP) with about 5.8nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to PtNP-embedded TiO2 films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10 4) and the stable device performance. These phenomena were caused by the presence of PtNP inserted within TMO films.",
author = "Chanwoo Lee and Inpyo Kim and Hyunjung Shin and Sanghyo Kim and Jinhan Cho",
year = "2010",
month = "4",
day = "21",
doi = "10.1088/0957-4484/21/18/185704",
language = "English",
volume = "21",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "18",

}

TY - JOUR

T1 - Nonvolatile memory properties of Pt nanoparticle-embedded TiO2 nanocomposite multilayers via electrostatic layer-by-layer assembly

AU - Lee, Chanwoo

AU - Kim, Inpyo

AU - Shin, Hyunjung

AU - Kim, Sanghyo

AU - Cho, Jinhan

PY - 2010/4/21

Y1 - 2010/4/21

N2 - It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (PtNP) with about 5.8nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to PtNP-embedded TiO2 films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10 4) and the stable device performance. These phenomena were caused by the presence of PtNP inserted within TMO films.

AB - It is demonstrated that notable resistive switching memory properties depending on voltage polarity (i.e. bipolar switching properties) can be obtained from the layer-by-layer (LbL) assembled multilayers based on transition metal oxides and metal nanoparticles. Cationic poly(allylamine hydrochloride) and anionic titania precursor layers were deposited alternately onto Pt-coated Si substrates using an electrostatic LbL assembly process. Anionic Pt nanoparticles (PtNP) with about 5.8nm diameter size were also inserted within the multilayers using the same interactions mentioned above. These multilayers were converted to PtNP-embedded TiO2 films by thermal annealing and the films were then coated with a top electrode. When external bias was applied to the devices, bipolar switching properties were observed at low operating voltages showing the high ON/OFF ratio (>10 4) and the stable device performance. These phenomena were caused by the presence of PtNP inserted within TMO films.

UR - http://www.scopus.com/inward/record.url?scp=77950934349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950934349&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/21/18/185704

DO - 10.1088/0957-4484/21/18/185704

M3 - Article

VL - 21

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 18

M1 - 185704

ER -