Nonvolatile resistance switching on two-dimensional electron gas

Jin Gwan Joung, Shin Ik Kim, Seon Young Moon, Dai Hong Kim, Hyo Jin Gwon, Seong Hyeon Hong, Hye Jung Chang, Jin Ha Hwang, Beom Jin Kwon, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Chong-Yun Kang, Kwang Soo Yoo, Jin Sang Kim, Seung Hyub Baek

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

Original languageEnglish
Pages (from-to)17785-17791
Number of pages7
JournalACS Applied Materials and Interfaces
Volume6
Issue number20
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Two dimensional electron gas
Leakage currents
Oxides
Heterojunctions
Data storage equipment
Metal insulator transition
Electronic equipment
Physics
Electrodes

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Joung, J. G., Kim, S. I., Moon, S. Y., Kim, D. H., Gwon, H. J., Hong, S. H., ... Baek, S. H. (2014). Nonvolatile resistance switching on two-dimensional electron gas. ACS Applied Materials and Interfaces, 6(20), 17785-17791. https://doi.org/10.1021/am504354c

Nonvolatile resistance switching on two-dimensional electron gas. / Joung, Jin Gwan; Kim, Shin Ik; Moon, Seon Young; Kim, Dai Hong; Gwon, Hyo Jin; Hong, Seong Hyeon; Chang, Hye Jung; Hwang, Jin Ha; Kwon, Beom Jin; Kim, Seong Keun; Choi, Ji Won; Yoon, Seok Jin; Kang, Chong-Yun; Yoo, Kwang Soo; Kim, Jin Sang; Baek, Seung Hyub.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 20, 01.01.2014, p. 17785-17791.

Research output: Contribution to journalArticle

Joung, JG, Kim, SI, Moon, SY, Kim, DH, Gwon, HJ, Hong, SH, Chang, HJ, Hwang, JH, Kwon, BJ, Kim, SK, Choi, JW, Yoon, SJ, Kang, C-Y, Yoo, KS, Kim, JS & Baek, SH 2014, 'Nonvolatile resistance switching on two-dimensional electron gas', ACS Applied Materials and Interfaces, vol. 6, no. 20, pp. 17785-17791. https://doi.org/10.1021/am504354c
Joung JG, Kim SI, Moon SY, Kim DH, Gwon HJ, Hong SH et al. Nonvolatile resistance switching on two-dimensional electron gas. ACS Applied Materials and Interfaces. 2014 Jan 1;6(20):17785-17791. https://doi.org/10.1021/am504354c
Joung, Jin Gwan ; Kim, Shin Ik ; Moon, Seon Young ; Kim, Dai Hong ; Gwon, Hyo Jin ; Hong, Seong Hyeon ; Chang, Hye Jung ; Hwang, Jin Ha ; Kwon, Beom Jin ; Kim, Seong Keun ; Choi, Ji Won ; Yoon, Seok Jin ; Kang, Chong-Yun ; Yoo, Kwang Soo ; Kim, Jin Sang ; Baek, Seung Hyub. / Nonvolatile resistance switching on two-dimensional electron gas. In: ACS Applied Materials and Interfaces. 2014 ; Vol. 6, No. 20. pp. 17785-17791.
@article{ae63d05460dd49c49f89dcf1d51f7de4,
title = "Nonvolatile resistance switching on two-dimensional electron gas",
abstract = "Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.",
keywords = "complex oxide, heterointerface, nonvolatile memory, resistance switching, two-dimensional electron gas",
author = "Joung, {Jin Gwan} and Kim, {Shin Ik} and Moon, {Seon Young} and Kim, {Dai Hong} and Gwon, {Hyo Jin} and Hong, {Seong Hyeon} and Chang, {Hye Jung} and Hwang, {Jin Ha} and Kwon, {Beom Jin} and Kim, {Seong Keun} and Choi, {Ji Won} and Yoon, {Seok Jin} and Chong-Yun Kang and Yoo, {Kwang Soo} and Kim, {Jin Sang} and Baek, {Seung Hyub}",
year = "2014",
month = "1",
day = "1",
doi = "10.1021/am504354c",
language = "English",
volume = "6",
pages = "17785--17791",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "20",

}

TY - JOUR

T1 - Nonvolatile resistance switching on two-dimensional electron gas

AU - Joung, Jin Gwan

AU - Kim, Shin Ik

AU - Moon, Seon Young

AU - Kim, Dai Hong

AU - Gwon, Hyo Jin

AU - Hong, Seong Hyeon

AU - Chang, Hye Jung

AU - Hwang, Jin Ha

AU - Kwon, Beom Jin

AU - Kim, Seong Keun

AU - Choi, Ji Won

AU - Yoon, Seok Jin

AU - Kang, Chong-Yun

AU - Yoo, Kwang Soo

AU - Kim, Jin Sang

AU - Baek, Seung Hyub

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

AB - Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

KW - complex oxide

KW - heterointerface

KW - nonvolatile memory

KW - resistance switching

KW - two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=84908192052&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908192052&partnerID=8YFLogxK

U2 - 10.1021/am504354c

DO - 10.1021/am504354c

M3 - Article

VL - 6

SP - 17785

EP - 17791

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 20

ER -