Nonvolatile resistive switching memory properties of thermally annealed titania precursor/polyelectrolyte multilayers

Chanwoo Lee, Inpyo Kim, Hyunjung Shin, Sanghyo Kim, Jinhan Cho

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon substrates using electrostatic interactions. The multilayers were then converted to TiO2 nanocomposite (TiO 2 NC) films after thermal annealing. A top electrode was coated on the TiO2 NC films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (approximately 0.4 VRESET and 1.3 VSET), which is comparable to that observed in conventional devices fabricated by sputtering or metal organic chemical vapor deposition processes. The reported approach offers new opportunities for preparing inorganic material-based resistive switching memory devices with tailored electronic properties, allowing facile solution processing.

Original languageEnglish
Pages (from-to)11276-11281
Number of pages6
JournalLangmuir
Volume25
Issue number19
DOIs
Publication statusPublished - 2009 Oct 6
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Spectroscopy
  • Electrochemistry

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