Nonvolatile resistive switching memory properties of thermally annealed titania precursor/polyelectrolyte multilayers

We describe a novel and versatile approach for preparing resistive switching memory devices based on transition metal oxides. A titania precursor and poly(allyamine hydrochloride) (PAH) layers were deposited alternately onto platinum (Pt)-coated silicon substrates using electrostatic interactions. The multilayers were then converted to TiO₂ nanocomposite (TiO ₂ NC) films after thermal annealing. A top electrode was coated on the TiO₂ NC films to complete device fabrication. When an external bias was applied to the devices, a switching phenomenon independent of the voltage polarity (i.e., unipolar switching) was observed at low operating voltages (approximately 0.4 V_RESET and 1.3 V_SET), which is comparable to that observed in conventional devices fabricated by sputtering or metal organic chemical vapor deposition processes. The reported approach offers new opportunities for preparing inorganic material-based resistive switching memory devices with tailored electronic properties, allowing facile solution processing.