NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels

Yoonjoong Kim, Youngin Jeon, Minsuk Kim, Sangsig Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

In this study, we propose a novel combination of tunneling field-effect transistors (TFETs) with asymmetrically doped p+-i-n+ silicon nanowire (SiNW) channels on a bendable substrate. The combination of two n-channel SiNW-TFETs (NWTFETs) in parallel and two p-channel NWTFETs in series operates as a two-input NOR logic gate. The component NWTFETs with the n- and p-channels exhibit subthreshold swings (SSs) of 69 and 53 mV·dec−1, respectively, and the on/off current ratios are ~106. The NOR logic operation is sustainable and reproducible for up to 1,000 bending cycles with a narrow transition width of ~0.26 V. The mechanical bendability of the bendable NWTFETs shows that they are stable and have good fatigue properties. To the best of our knowledge, this is the first study on the electrical and mechanical characteristics of a bendable NOR logic gate composed of NWTFETs. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)499-506
Number of pages8
JournalNano Research
Volume9
Issue number2
DOIs
Publication statusPublished - 2016 Feb 1

Fingerprint

Logic gates
Silicon
Field effect transistors
Nanowires
Formability
Fatigue of materials
Substrates

Keywords

  • bendable substrate
  • field-effect transistor
  • NOR logic gate
  • silicon nanowire array
  • tunneling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

NOR logic function of a bendable combination of tunneling field-effect transistors with silicon nanowire channels. / Kim, Yoonjoong; Jeon, Youngin; Kim, Minsuk; Kim, Sangsig.

In: Nano Research, Vol. 9, No. 2, 01.02.2016, p. 499-506.

Research output: Contribution to journalArticle

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