NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers

Donghyuk Yeom, Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Changjoon Yoon, Dong Seung Kim, Sangsig Kim

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

Original languageEnglish
Article number265202
JournalNanotechnology
Volume19
Issue number26
DOIs
Publication statusPublished - 2008 Jul 2

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NAND circuits
Nanowires
Field effect transistors
Gates (transistor)
Logic circuits
Ions
Electrodes
Electric potential

ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers. / Yeom, Donghyuk; Keem, Kihyun; Kang, Jeongmin; Jeong, Dong Young; Yoon, Changjoon; Kim, Dong Seung; Kim, Sangsig.

In: Nanotechnology, Vol. 19, No. 26, 265202, 02.07.2008.

Research output: Contribution to journalArticle

Yeom, Donghyuk ; Keem, Kihyun ; Kang, Jeongmin ; Jeong, Dong Young ; Yoon, Changjoon ; Kim, Dong Seung ; Kim, Sangsig. / NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers. In: Nanotechnology. 2008 ; Vol. 19, No. 26.
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