NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers

Donghyuk Yeom, Kihyun Keem, Jeongmin Kang, Dong Young Jeong, Changjoon Yoon, Dong Seung Kim, Sangsig Kim

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Abstract

Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al 2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose Ion/Ioff ratios were as high as ∼108 were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.

Original languageEnglish
Article number265202
JournalNanotechnology
Volume19
Issue number26
DOIs
Publication statusPublished - 2008 Jul 2

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ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

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