Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun-Yong Yu, Masaharu Kobayashi, Jin Hong Park, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n +/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10 3) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

Original languageEnglish
Article number5716664
Pages (from-to)446-448
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number4
DOIs
Publication statusPublished - 2011 Apr 1
Externally publishedYes

Fingerprint

Germanium
Electron mobility
Doping (additives)
Single crystals

Keywords

  • Germanium
  • heteroepitaxy
  • in situ
  • MOSFET
  • raised
  • selective

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration. / Yu, Hyun-Yong; Kobayashi, Masaharu; Park, Jin Hong; Nishi, Yoshio; Saraswat, Krishna C.

In: IEEE Electron Device Letters, Vol. 32, No. 4, 5716664, 01.04.2011, p. 446-448.

Research output: Contribution to journalArticle

Yu, Hyun-Yong ; Kobayashi, Masaharu ; Park, Jin Hong ; Nishi, Yoshio ; Saraswat, Krishna C. / Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 4. pp. 446-448.
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