Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun Yong Yu; Masaharu Kobayashi; Jin Hong Park; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/LED.2011.2106756

Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun Yong Yu, Masaharu Kobayashi, Jin Hong Park, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n⁺/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10³) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

Original language	English
Article number	5716664
Pages (from-to)	446-448
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2106756
Publication status	Published - 2011 Apr
Externally published	Yes

Keywords

Germanium
MOSFET
heteroepitaxy
in situ
raised
selective

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2011.2106756

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title = "Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration",

abstract = "We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n+/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 103) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.",

keywords = "Germanium, MOSFET, heteroepitaxy, in situ, raised, selective",

author = "Yu, {Hyun Yong} and Masaharu Kobayashi and Park, {Jin Hong} and Yoshio Nishi and Saraswat, {Krishna C.}",

note = "Funding Information: Manuscript received December 7, 2010; revised December 25, 2010; accepted January 8, 2011. Date of publication February 22, 2011; date of current version March 23, 2011. This work was supported in part by the MARCO Interconnect Focus Center and in part by the Stanford University INMP Program. The review of this letter was arranged by Editor M. Ostling.",

year = "2011",

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doi = "10.1109/LED.2011.2106756",

language = "English",

volume = "32",

pages = "446--448",

journal = "IEEE Electron Device Letters",

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AU - Yu, Hyun Yong

AU - Kobayashi, Masaharu

AU - Park, Jin Hong

AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

N1 - Funding Information: Manuscript received December 7, 2010; revised December 25, 2010; accepted January 8, 2011. Date of publication February 22, 2011; date of current version March 23, 2011. This work was supported in part by the MARCO Interconnect Focus Center and in part by the Stanford University INMP Program. The review of this letter was arranged by Editor M. Ostling.

PY - 2011/4

Y1 - 2011/4

N2 - We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n+/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 103) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

AB - We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n+/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 103) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

KW - Germanium

KW - MOSFET

KW - heteroepitaxy

KW - in situ

KW - raised

KW - selective

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DO - 10.1109/LED.2011.2106756

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SP - 446

EP - 448

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

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ER -

Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Abstract

Keywords

ASJC Scopus subject areas

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