Abstract
We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n+/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 103) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.
| Original language | English |
|---|---|
| Article number | 5716664 |
| Pages (from-to) | 446-448 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Apr |
| Externally published | Yes |
Keywords
- Germanium
- MOSFET
- heteroepitaxy
- in situ
- raised
- selective
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Yu, H. Y., Kobayashi, M., Park, J. H., Nishi, Y., & Saraswat, K. C. (2011). Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration. IEEE Electron Device Letters, 32(4), 446-448. [5716664]. https://doi.org/10.1109/LED.2011.2106756