Abstract
We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n +/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10 3) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.
| Original language | English |
|---|---|
| Article number | 5716664 |
| Pages (from-to) | 446-448 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 32 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Apr 1 |
| Externally published | Yes |
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Keywords
- Germanium
- heteroepitaxy
- in situ
- MOSFET
- raised
- selective
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration. / Yu, Hyun-Yong; Kobayashi, Masaharu; Park, Jin Hong; Nishi, Yoshio; Saraswat, Krishna C.
In: IEEE Electron Device Letters, Vol. 32, No. 4, 5716664, 01.04.2011, p. 446-448.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration
AU - Yu, Hyun-Yong
AU - Kobayashi, Masaharu
AU - Park, Jin Hong
AU - Nishi, Yoshio
AU - Saraswat, Krishna C.
PY - 2011/4/1
Y1 - 2011/4/1
N2 - We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n +/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10 3) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.
AB - We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n +/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10 3) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.
KW - Germanium
KW - heteroepitaxy
KW - in situ
KW - MOSFET
KW - raised
KW - selective
UR - http://www.scopus.com/inward/record.url?scp=79953058996&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79953058996&partnerID=8YFLogxK
U2 - 10.1109/LED.2011.2106756
DO - 10.1109/LED.2011.2106756
M3 - Article
AN - SCOPUS:79953058996
VL - 32
SP - 446
EP - 448
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
M1 - 5716664
ER -