Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun Yong Yu; Masaharu Kobayashi; Jin Hong Park; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/LED.2011.2106756

Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun Yong Yu, Masaharu Kobayashi, Jin Hong Park, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n⁺/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10³) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

Original language	English
Article number	5716664
Pages (from-to)	446-448
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2106756
Publication status	Published - 2011 Apr
Externally published	Yes

Keywords

Germanium
MOSFET
heteroepitaxy
in situ
raised
selective

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration",

abstract = "We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n+/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 103) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.",

keywords = "Germanium, MOSFET, heteroepitaxy, in situ, raised, selective",

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AU - Kobayashi, Masaharu

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AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

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AB - We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n+/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 103) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

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