Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun-Yong Yu; Masaharu Kobayashi; Jin Hong Park; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/LED.2011.2106756

Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration

Hyun-Yong Yu, Masaharu Kobayashi, Jin Hong Park, Yoshio Nishi, Krishna C. Saraswat

Research output: Contribution to journal › Article

11 Citations (Scopus)

Abstract

We demonstrate novel Ge n-MOSFETs with raised source/drain (S/D) fabricated on high-quality single-crystal Ge selectively grown heteroepitaxially on Si. For the raised S/D, an implant-free in situ doping technique has been employed for low-resistance, abrupt, and shallow n ⁺/p junctions. The novel n-MOSFETs show an excellent on/off ratio (4 × 10 ³) with very high on current (3.23 μA/μm) and relatively high electron mobility on (100) Ge among the Ge n-MOSFETs. These results show promise toward monolithic integration of Ge MOSFETs with a Si VLSI platform.

Original language	English
Article number	5716664
Pages (from-to)	446-448
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2106756
Publication status	Published - 2011 Apr 1
Externally published	Yes

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Keywords

Germanium
heteroepitaxy
in situ
MOSFET
raised
selective

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Yu, H-Y., Kobayashi, M., Park, J. H., Nishi, Y., & Saraswat, K. C. (2011). Novel germanium n-MOSFETs with raised source/drain on selectively grown ge on si for monolithic integration. IEEE Electron Device Letters, 32(4), 446-448. [5716664]. https://doi.org/10.1109/LED.2011.2106756

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Access to Document

10.1109/LED.2011.2106756