Novel zinc oxide inks with zinc oxide nanoparticles for low-temperature, solution-processed thin-film transistors

Song Yun Cho; Young Hun Kang; Jun Young Jung; So Youn Nam; Jongsun Lim; Sung Cheol Yoon; Dong Hoon Choi; Changjin Lee

doi:10.1021/cm2036234

Novel zinc oxide inks with zinc oxide nanoparticles for low-temperature, solution-processed thin-film transistors

Song Yun Cho, Young Hun Kang, Jun Young Jung, So Youn Nam, Jongsun Lim, Sung Cheol Yoon, Dong Hoon Choi, Changjin Lee

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm ² V ^-1 s ^-1 and an on/off ratio of 5.89 × 10 ⁸ even at low processing temperature of 250 °C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.

Original language	English
Pages (from-to)	3517-3524
Number of pages	8
Journal	Chemistry of Materials
Volume	24
Issue number	18
DOIs	https://doi.org/10.1021/cm2036234
Publication status	Published - 2012 Sept 25

Keywords

low-temperature process
nanoparticle/precursor ink
thin-film transistor
zinc oxide

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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10.1021/cm2036234

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title = "Novel zinc oxide inks with zinc oxide nanoparticles for low-temperature, solution-processed thin-film transistors",

abstract = "Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm 2 V -1 s -1 and an on/off ratio of 5.89 × 10 8 even at low processing temperature of 250 °C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.",

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T1 - Novel zinc oxide inks with zinc oxide nanoparticles for low-temperature, solution-processed thin-film transistors

AU - Cho, Song Yun

AU - Kang, Young Hun

AU - Jung, Jun Young

AU - Nam, So Youn

AU - Lim, Jongsun

AU - Yoon, Sung Cheol

AU - Choi, Dong Hoon

AU - Lee, Changjin

PY - 2012/9/25

Y1 - 2012/9/25

N2 - Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm 2 V -1 s -1 and an on/off ratio of 5.89 × 10 8 even at low processing temperature of 250 °C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.

AB - Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm 2 V -1 s -1 and an on/off ratio of 5.89 × 10 8 even at low processing temperature of 250 °C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.

KW - low-temperature process

KW - nanoparticle/precursor ink

KW - thin-film transistor

KW - zinc oxide

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Novel zinc oxide inks with zinc oxide nanoparticles for low-temperature, solution-processed thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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