N+/P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices

Key Min Lee, Chel Jong Choi, Joo Hyoung Lee, Tae Yeon Seong, Young Jin Park, Sung Kwon Hong, Jae Gyung Ahn, Hi Deok Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have proposed that As dopants in the n+/p active region are redistributed during Co salicidation process, especially in the active edge area in contact with the field oxide. The dopant redistribution has been verified through a novel two-dimensional (2-D) dopant profiling method, i.e., the transmission electron microscope (TEM) combined with selective chemical etching. It was shown that As dopants move down from the silicide layer into the junction area, which results in the deeper junction compared with nonsilicided junction. On the contrary, the junction profile behavior at the active edge area is completely opposite to that inside active region. That is, the junction profile is bent upward at the active edge, which results in the increase or even fail of junction leakage current of perimeter intensive diodes due to the decreased distance from the silicide bottom to the junction depth. Therefore, the dopant redistribution at the n+/p active edge should be reduced or suppressed for reliable shallow silicided junction formation.

Original languageEnglish
Pages (from-to)937-939
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume49
Issue number5
DOIs
Publication statusPublished - 2002 May 1
Externally publishedYes

Fingerprint

CMOS
leakage
Doping (additives)
Leakage currents
Oxides
Etching
Diodes
Electron microscopes
profiles
electron microscopes
diodes
etching
oxides

Keywords

  • Co salicide
  • Dopant redistribution
  • Shallow silicided junction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

N+/P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices. / Lee, Key Min; Choi, Chel Jong; Lee, Joo Hyoung; Seong, Tae Yeon; Park, Young Jin; Hong, Sung Kwon; Ahn, Jae Gyung; Lee, Hi Deok.

In: IEEE Transactions on Electron Devices, Vol. 49, No. 5, 01.05.2002, p. 937-939.

Research output: Contribution to journalArticle

Lee, Key Min ; Choi, Chel Jong ; Lee, Joo Hyoung ; Seong, Tae Yeon ; Park, Young Jin ; Hong, Sung Kwon ; Ahn, Jae Gyung ; Lee, Hi Deok. / N+/P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices. In: IEEE Transactions on Electron Devices. 2002 ; Vol. 49, No. 5. pp. 937-939.
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AU - Hong, Sung Kwon

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