Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

Ho Young Chung, Kie Young Woo, Su Jin Kim, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalSuperlattices and Microstructures
Volume64
DOIs
Publication statusPublished - 2013 Oct 14

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Keywords

  • Efficiency droop
  • Internal quantum efficiency
  • Light-emitting diodes
  • Numerical simulation
  • Quantum well and barrier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Materials Science(all)

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