NURBS-based formulation for nonlinear electro-gradient elasticity in semiconductors

B. H. Nguyen, X. Zhuang, Timon Rabczuk

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Nanowire based semiconductors are promising for nanogenerators. However, there exist limited numerical tools to analyze these type of structures taking into account effects which are of particular importance at nanoscale. Therefore, we present a finite deformation NURBS based formulation to model a multifunctional material that couples strain, strain gradient, polarization and free charge carriers simultaneously. Specifically, the weak form and consistent linearization of the piezoelectric semiconductor including flexoelectricity and non-local elasticity are introduced. The nonlinear equations are then discretized and solved by utilizing isogeometric analysis (IGA) which fulfills the [Formula presented] continuity requirement. Several numerical examples are performed to investigate the influence of flexoelectricity and non-local elasticity in ZnO piezoelectric semiconductor nanowires under large deformation. The formulation developed in this work can contribute to the development of novel nanoelectromechanical coupling devices such as flexoelectric nanogenerators.

Original languageEnglish
JournalComputer Methods in Applied Mechanics and Engineering
DOIs
Publication statusAccepted/In press - 2018 Jan 1
Externally publishedYes

Keywords

  • Finite deformation
  • Flexoelectricity
  • Piezoelectricity
  • ZnO semiconductor

ASJC Scopus subject areas

  • Computational Mechanics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Computer Science Applications

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