Observation of ambipolar field-effect behavior in donor-acceptor conjugated copolymers

Shinuk Cho, Jung Hwa Seo, Gi Hwan Kim, Jin Young Kim, Han Young Woo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Although donor (D)-acceptor (A) conjugated copolymers possess an electron deficient unit, most D-A copolymers exhibit only hole transport properties (p-type). While there are some D-A copolymers that show ambipolarity, n-type behaviour is highly dependent on the type of acceptor used. In this work, ambipolar field-effect behaviour was derived from general D-A conjugated copolymers, believed to be a typical p-type material, by introducing a functional passivation layer between gate dielectric and active layers using polypropylene-co-1-butene (PPcB). The PPcB layer effectively covered the hydroxyl groups and induced a reduction in the energetic disorder at the semiconductor-insulator interface. As a result, the FET devices fabricated using D-A conjugated copolymers, such as PCDTBT, PTBT and Si-PCPDTBT, showed clear ambipolar properties.

Original languageEnglish
Pages (from-to)21238-21241
Number of pages4
JournalJournal of Materials Chemistry
Volume22
Issue number39
DOIs
Publication statusPublished - 2012 Oct 21
Externally publishedYes

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Copolymers
Polypropylenes
Butenes
Gate dielectrics
Field effect transistors
Passivation
Hydroxyl Radical
Transport properties
Semiconductor materials
Electrons
1-butene

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Observation of ambipolar field-effect behavior in donor-acceptor conjugated copolymers. / Cho, Shinuk; Seo, Jung Hwa; Kim, Gi Hwan; Kim, Jin Young; Woo, Han Young.

In: Journal of Materials Chemistry, Vol. 22, No. 39, 21.10.2012, p. 21238-21241.

Research output: Contribution to journalArticle

Cho, Shinuk ; Seo, Jung Hwa ; Kim, Gi Hwan ; Kim, Jin Young ; Woo, Han Young. / Observation of ambipolar field-effect behavior in donor-acceptor conjugated copolymers. In: Journal of Materials Chemistry. 2012 ; Vol. 22, No. 39. pp. 21238-21241.
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