Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs

Be/Ga1-xMnx As trilayer structure

J. Leiner, H. Lee, T. Yoo, Sang Hoon Lee, B. J. Kirby, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Dobrowolska

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

Original languageEnglish
Article number195205
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume82
Issue number19
DOIs
Publication statusPublished - 2010 Nov 16

Fingerprint

Exchange coupling
interlayers
Magnetocrystalline anisotropy
Galvanomagnetic effects
spacers
Neutron scattering
Magnetization
neutron scattering
magnetization
anisotropy
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs : Be/Ga1-xMnx As trilayer structure. / Leiner, J.; Lee, H.; Yoo, T.; Lee, Sang Hoon; Kirby, B. J.; Tivakornsasithorn, K.; Liu, X.; Furdyna, J. K.; Dobrowolska, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 82, No. 19, 195205, 16.11.2010.

Research output: Contribution to journalArticle

Leiner, J. ; Lee, H. ; Yoo, T. ; Lee, Sang Hoon ; Kirby, B. J. ; Tivakornsasithorn, K. ; Liu, X. ; Furdyna, J. K. ; Dobrowolska, M. / Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs : Be/Ga1-xMnx As trilayer structure. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 82, No. 19.
@article{abf014fadecf484f924b2f4228fc08fb,
title = "Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs: Be/Ga1-xMnx As trilayer structure",
abstract = "Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.",
author = "J. Leiner and H. Lee and T. Yoo and Lee, {Sang Hoon} and Kirby, {B. J.} and K. Tivakornsasithorn and X. Liu and Furdyna, {J. K.} and M. Dobrowolska",
year = "2010",
month = "11",
day = "16",
doi = "10.1103/PhysRevB.82.195205",
language = "English",
volume = "82",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs

T2 - Be/Ga1-xMnx As trilayer structure

AU - Leiner, J.

AU - Lee, H.

AU - Yoo, T.

AU - Lee, Sang Hoon

AU - Kirby, B. J.

AU - Tivakornsasithorn, K.

AU - Liu, X.

AU - Furdyna, J. K.

AU - Dobrowolska, M.

PY - 2010/11/16

Y1 - 2010/11/16

N2 - Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

AB - Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

UR - http://www.scopus.com/inward/record.url?scp=78649755372&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649755372&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.82.195205

DO - 10.1103/PhysRevB.82.195205

M3 - Article

VL - 82

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

M1 - 195205

ER -