Observation of antiferromagnetic interlayer exchange coupling in a Ga 1-xMnxAs/GaAs:Be/Ga1-xMnx As trilayer structure

J. Leiner, H. Lee, T. Yoo, Sanghoon Lee, B. J. Kirby, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Dobrowolska

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21 Citations (Scopus)


Interlayer exchange coupling (IEC) between two Ga0.95 Mn 0.05 As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

Original languageEnglish
Article number195205
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
Publication statusPublished - 2010 Nov 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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