Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene

Chang Soo Park, Yu Zhao, Yoon Shon, Chong S. Yoon, Haigun Lee, Cheol Jin Lee

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3 Citations (Scopus)

Abstract

We have doped manganese-oxide onto graphene by an electrochemical method. Graphene showed a clear ferromagnetic semiconductor behavior after doping of manganese-oxide. The manganese-oxide doped graphene has a coercive field (Hc) of 232 Oe at 10 K, and has the Curie temperature of 270 K from the temperature-dependent resistivity using transport measurement system. The ferromagnetism of manganese-oxide doped graphene attributes to the double-exchange from the coexistence of Mn<sup>3+</sup> and Mn<sup>4+</sup> on the surface of graphene. In addition, the semiconducting behavior is caused by the formation of manganese-oxide on graphene.

Original languageEnglish
Article number087120
JournalAIP Advances
Volume4
Issue number8
DOIs
Publication statusPublished - 2014

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manganese oxides
graphene
ferromagnetism
Curie temperature
electrical resistivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene. / Park, Chang Soo; Zhao, Yu; Shon, Yoon; Yoon, Chong S.; Lee, Haigun; Lee, Cheol Jin.

In: AIP Advances, Vol. 4, No. 8, 087120, 2014.

Research output: Contribution to journalArticle

Park, Chang Soo ; Zhao, Yu ; Shon, Yoon ; Yoon, Chong S. ; Lee, Haigun ; Lee, Cheol Jin. / Observation of ferromagnetic semiconductor behavior in manganese-oxide doped graphene. In: AIP Advances. 2014 ; Vol. 4, No. 8.
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