Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

Min Yeong Song, Yujeong Seo, Soyun Park, Jae Hyuk Lee, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

Original languageEnglish
Pages (from-to)6212-6215
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

Fingerprint

Nanotubes
Nanorods
nanorods
Observation
Equipment and Supplies
Electric potential
electric potential
Polymethyl Methacrylate
Seeds
endurance
Gels
random access memory
Spin coating
low voltage
Sol-gels
Seed
coating
seeds
Durability
gels

Keywords

  • Resistive switching
  • Voltage distribution
  • ZnO nanorod

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods. / Song, Min Yeong; Seo, Yujeong; Park, Soyun; Lee, Jae Hyuk; An, Ho Myoung; Kim, Tae Geun.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 9, 01.09.2013, p. 6212-6215.

Research output: Contribution to journalArticle

Song, Min Yeong ; Seo, Yujeong ; Park, Soyun ; Lee, Jae Hyuk ; An, Ho Myoung ; Kim, Tae Geun. / Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods. In: Journal of Nanoscience and Nanotechnology. 2013 ; Vol. 13, No. 9. pp. 6212-6215.
@article{a0a9b7a2b9cb481a950253c37ac819f8,
title = "Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods",
abstract = "The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).",
keywords = "Resistive switching, Voltage distribution, ZnO nanorod",
author = "Song, {Min Yeong} and Yujeong Seo and Soyun Park and Lee, {Jae Hyuk} and An, {Ho Myoung} and Kim, {Tae Geun}",
year = "2013",
month = "9",
day = "1",
doi = "10.1166/jnn.2013.7701",
language = "English",
volume = "13",
pages = "6212--6215",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "9",

}

TY - JOUR

T1 - Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods

AU - Song, Min Yeong

AU - Seo, Yujeong

AU - Park, Soyun

AU - Lee, Jae Hyuk

AU - An, Ho Myoung

AU - Kim, Tae Geun

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

AB - The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).

KW - Resistive switching

KW - Voltage distribution

KW - ZnO nanorod

UR - http://www.scopus.com/inward/record.url?scp=84885455658&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885455658&partnerID=8YFLogxK

U2 - 10.1166/jnn.2013.7701

DO - 10.1166/jnn.2013.7701

M3 - Article

AN - SCOPUS:84885455658

VL - 13

SP - 6212

EP - 6215

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 9

ER -