Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

Joondong Kim, Eung Sug Lee, Chang-Soo Han, Youngjin Kang, Dojin Kim, Wayne A. Anderson

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm2 comparing to 76.5 μA/cm2 from a Si substrate at 5 V/μm.

Original languageEnglish
Pages (from-to)1709-1712
Number of pages4
JournalMicroelectronic Engineering
Volume85
Issue number8
DOIs
Publication statusPublished - 2008 Aug 1
Externally publishedYes

Fingerprint

Field emission
Nanowires
field emission
Tungsten
nanowires
tungsten
Physical vapor deposition
Substrates
Film thickness
film thickness
vapor deposition
gradients
augmentation

Keywords

  • Field emission
  • Growth condition
  • Ni silicide nanowires

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Observation of Ni silicide formations and field emission properties of Ni silicide nanowires. / Kim, Joondong; Lee, Eung Sug; Han, Chang-Soo; Kang, Youngjin; Kim, Dojin; Anderson, Wayne A.

In: Microelectronic Engineering, Vol. 85, No. 8, 01.08.2008, p. 1709-1712.

Research output: Contribution to journalArticle

Kim, Joondong ; Lee, Eung Sug ; Han, Chang-Soo ; Kang, Youngjin ; Kim, Dojin ; Anderson, Wayne A. / Observation of Ni silicide formations and field emission properties of Ni silicide nanowires. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 8. pp. 1709-1712.
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