Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

Joondong Kim; Eung Sug Lee; Chang Soo Han; Youngjin Kang; Dojin Kim; Wayne A. Anderson

doi:10.1016/j.mee.2008.04.034

Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

Joondong Kim, Eung Sug Lee, Chang Soo Han, Youngjin Kang, Dojin Kim, Wayne A. Anderson

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm² comparing to 76.5 μA/cm² from a Si substrate at 5 V/μm.

Original language	English
Pages (from-to)	1709-1712
Number of pages	4
Journal	Microelectronic Engineering
Volume	85
Issue number	8
DOIs	https://doi.org/10.1016/j.mee.2008.04.034
Publication status	Published - 2008 Aug
Externally published	Yes

Keywords

Field emission
Growth condition
Ni silicide nanowires

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2008.04.034

Cite this

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title = "Observation of Ni silicide formations and field emission properties of Ni silicide nanowires",

abstract = "The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm2 comparing to 76.5 μA/cm2 from a Si substrate at 5 V/μm.",

keywords = "Field emission, Growth condition, Ni silicide nanowires",

author = "Joondong Kim and Lee, {Eung Sug} and Han, {Chang Soo} and Youngjin Kang and Dojin Kim and Anderson, {Wayne A.}",

note = "Funding Information: The authors acknowledge the financial support from Daedeok Innopolis and Center for Nanoscale Mechatronics and Manufacturing of the 21C Frontier Research Program by the Ministry of Science and Technology (MOST) in Korea and National Science Foundation (ECS-0324893) in USA.",

year = "2008",

month = aug,

doi = "10.1016/j.mee.2008.04.034",

language = "English",

volume = "85",

pages = "1709--1712",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "8",

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TY - JOUR

T1 - Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

AU - Kim, Joondong

AU - Lee, Eung Sug

AU - Han, Chang Soo

AU - Kang, Youngjin

AU - Kim, Dojin

AU - Anderson, Wayne A.

N1 - Funding Information: The authors acknowledge the financial support from Daedeok Innopolis and Center for Nanoscale Mechatronics and Manufacturing of the 21C Frontier Research Program by the Ministry of Science and Technology (MOST) in Korea and National Science Foundation (ECS-0324893) in USA.

PY - 2008/8

Y1 - 2008/8

N2 - The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm2 comparing to 76.5 μA/cm2 from a Si substrate at 5 V/μm.

AB - The Ni silicide nanowires were grown by physical vapor deposition. The morphological changes of silicide formation were observed on a gradient Ni film thickness, which visualized the critical thickness is 60-80 nm to grow nanowires. The field emission measurement provided uniform characteristics and high field enhancement factors were obtained to be 3180 and 3002 from the Ni silicide nanowires grown on a Si substrate and a tungsten plate, respectively. By using a conductive tungsten plate, the emission current was enhanced to be 172.5 μA/cm2 comparing to 76.5 μA/cm2 from a Si substrate at 5 V/μm.

KW - Field emission

KW - Growth condition

KW - Ni silicide nanowires

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U2 - 10.1016/j.mee.2008.04.034

DO - 10.1016/j.mee.2008.04.034

M3 - Article

AN - SCOPUS:48949116074

SN - 0167-9317

VL - 85

SP - 1709

EP - 1712

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 8

ER -

Observation of Ni silicide formations and field emission properties of Ni silicide nanowires

Abstract

Keywords

ASJC Scopus subject areas

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