Observation of room temperature magnetoresistance in a lateral ferromagnet-semiconductor structure

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticlepeer-review

Abstract

For an efficient spin-transport in a two-dimensional electron gas system, control of ferromagnet-semiconductor interface resistance is a very crucial factor and the clear spin-signal is detected in the range of 4 - 50 Ω μm2 in our experiments. The magnetoresistance of the local spin-valve measurement slowly reduces with increasing temperature, but ΔR/R remains near 1% at room temperature. Based on the experimental results and calculations, our InAs channel system shows strong possibility for a spin transistor application.

Original languageEnglish
Pages (from-to)4448-4451
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number12
DOIs
Publication statusPublished - 2007 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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