Observation of room temperature magnetoresistance in a lateral ferromagnet-semiconductor structure

Hyun Cheol Koo, Jae Hyun Kwon, Jonghwa Eom, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

Abstract

For an efficient spin-transport in a two-dimensional electron gas system, control of ferromagnet-semiconductor interface resistance is a very crucial factor and the clear spin-signal is detected in the range of 4 - 50 Ω μm2 in our experiments. The magnetoresistance of the local spin-valve measurement slowly reduces with increasing temperature, but ΔR/R remains near 1% at room temperature. Based on the experimental results and calculations, our InAs channel system shows strong possibility for a spin transistor application.

Original languageEnglish
Pages (from-to)4448-4451
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes

Fingerprint

Magnetoresistance
Semiconductor materials
Two dimensional electron gas
room temperature
Transistors
Control systems
Temperature
electron gas
transistors
Experiments
temperature
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Observation of room temperature magnetoresistance in a lateral ferromagnet-semiconductor structure. / Koo, Hyun Cheol; Kwon, Jae Hyun; Eom, Jonghwa; Chang, Joonyeon; Han, Suk Hee.

In: Physica Status Solidi (B) Basic Research, Vol. 244, No. 12, 01.12.2007, p. 4448-4451.

Research output: Contribution to journalArticle

Koo, Hyun Cheol ; Kwon, Jae Hyun ; Eom, Jonghwa ; Chang, Joonyeon ; Han, Suk Hee. / Observation of room temperature magnetoresistance in a lateral ferromagnet-semiconductor structure. In: Physica Status Solidi (B) Basic Research. 2007 ; Vol. 244, No. 12. pp. 4448-4451.
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